N-Channel 30-V (D-S) MOSFET

文件：1.68918 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

丝印：05N03LA；Package：P-TO252-3-11；OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS comp

文件：404.37 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：05N03LA；Package：P-TO251-3-23；OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS comp

文件：404.37 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：05N03LA；Package：P-TO251-3-11；OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS comp

文件：404.37 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：05N03LA；Package：P-TO251-3-1；OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS comp

文件：404.37 Kbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS comp

文件：404.37 Kbytes 页数：12 Pages

Infineon

英飞凌