2.0 W/B CONN. IDT REC. HSG ASSY

文件：129.58 Kbytes 页数：3 Pages

Molex

莫仕

2.0 W/B CONN. IDT REC. HSG ASSY

文件：125.76 Kbytes 页数：3 Pages

Molex

莫仕

2.0 W/B CONN. IDT REC. HSG ASSY

文件：125.53 Kbytes 页数：3 Pages

Molex

莫仕

2.0 W/B CONN. IDT REC. HSG ASSY

文件：125.76 Kbytes 页数：3 Pages

Molex

莫仕

2.0 W/B CONN. IDT REC. HSG ASSY

文件：125.76 Kbytes 页数：3 Pages

Molex

莫仕

2.0 W/B CONN. IDT REC. HSG ASSY

文件：125.77 Kbytes 页数：3 Pages

Molex

莫仕

丝印：0524P；Package：DFN2510；High Definition Multi-Media Interface (HDMI)

FEATURES UItra Iow capacitance：0.3pF typical（I/O to I/O) UItra Iow Ieakage：nA level Low operating voltage：5V Low clamping voltage Up to 4 date lines and one power line protects Complies with following standards -IEC 61000-4-2（ESD）immunity test Air discharge:±25kv Contact discharge：±20kv

文件：849.9 Kbytes 页数：4 Pages

UMW

友台半导体

丝印：0524P；Package：DFN2510；DFN2510 ESD Protection Devices ROHS

FEATURES UItra Iow capacitance：0.3pF typical（I/O to I/O) UItra Iow Ieakage：nA level Low operating voltage：5V Low clamping voltage Up to 4 date lines and one power line protects Complies with following standards -IEC 61000-4-2（ESD）immunity test Air discharge:±25kv Contact discharge：±20kv

文件：796.35 Kbytes 页数：4 Pages

EVVOSEMI

翊欧

丝印：0524P；Package：DFN2510-10L；Plastic-Encapsulate Diodes

DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low cap

文件：359.38 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

丝印：0524P；Package：DFN2510-10；Low Capactitance 4-Line Uni-directional TVS Diode

Features Ultra low capacitance: 0.3pF typical (I/O to 1/0) Ultra low leakage: nA level Low operating voltage: 5V Low clamping voltage Up to 4 data lines and one power line protects Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge: +20kV Contact discharg

文件：1.63764 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子