P-Channel 100 V (D-S) MOSFET

文件：1.90761 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 100 V (D-S) MOSFET

文件：1.90778 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MINI TYPE LED LAMPS

文件：293.43 Kbytes 页数：1 Pages

DBLECTRO

TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 400 Watts FEATURES : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1mA above 10V

文件：51.53 Kbytes 页数：4 Pages

EIC

TRANSIENT VOLTAGE SUPPRESSOR

BREAKDOWN VOLTAGE: 5.8 --- 376 V PEAK PULSE POWER: 400 W FEATURES ♦ Plastic package has underwriters laboratory flammability classification 94V-0 ♦ Glass passivated junction ♦ 400W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.01 ♦ Excellent clamping c

文件：113.51 Kbytes 页数：4 Pages

BILIN

银河微电