04N60C3

N-Channel 650 V (D-S) MOSFET

04N60C3

Marking：D2PAK；Package：TO-263；N-Channel 6 50V (D-S) Power MOSFET

04N60C3_V01

N-Channel 6 50V (D-S) Power MOSFET

ISPD04N60C3

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISPP04N60C3

N-ChannelMOSFETTransistor

SPA04N60C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated

SPA04N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

SPA04N60C3

N-Channel650V(D-S)MOSFET

SPA04N60C3

IscN-ChannelMOSFETTransistor

SPB04N60C3

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection