N-Channel 650 V (D-S) MOSFET

文件：1.94936 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：D2PAK；Package：TO-263；N-Channel 6 50V (D-S) Power MOSFET

文件：2.1288 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 6 50V (D-S) Power MOSFET

文件：2.1288 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：304.59 Kbytes 页数：14 Pages

INFINEON

英飞凌

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：304.59 Kbytes 页数：14 Pages

INFINEON

英飞凌

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance

文件：287.2 Kbytes 页数：12 Pages

INFINEON

英飞凌