丝印：047N08NS；Package：TDSON-8；OptiMOSTM3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS

文件：301.27 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：047N08NS；Package：TDSON-8；OptiMOS3 Power-Transistor

文件：327.01 Kbytes 页数：9 Pages

Infineon

英飞凌

N-Channel PowerTrench짰 MOSFET 75V, 164A, 4.7m廓

Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 80A • Fast switc

文件：521.809 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：328.22 Kbytes 页数：2 Pages

ISC

无锡固电

N-ch Trench MOS FET

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU

文件：411.7 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)