丝印：042FGS4；Package：HPLF5060T5LSAH；Nch 40V 120A Power MOSFET

lFeatures AEC-Q101 qualified 100% Avalanche tested lApplication Automotive Systems

文件：2.50363 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：042N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

文件：384.52 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：042N03MS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications

文件：386.91 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：042N03L；Package：PG-TO263-3；OptiMOS?? Power-Transistor

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; Ro

文件：370.62 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：042N10NS；Package：PG-TO263-7；MOSFET StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.16632 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：042N03L；Package：PG-TO220-3-1；OptiMOS?? Power-Transistor

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; Ro

文件：370.62 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：042N10LS；Package：DFN5060X-8L；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON)

文件：707.92 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：0422；RailClamp ® 2-Line ESD & Surge Protection

Features High ESD withstand voltage IEC 61000-4-2 (ESD): ±30kV (contact), ±30kV (air) IEC 61000-4-5 (Ligh ning): 18A (8/20μs) IEC 61000-4-4 (EFT): 4kV, 80A Low capacitance: 0.75pF Max Protects two high speed data lines Working voltage: 4V Low ESD clamping voltage Low dynamic resis

文件：755.78 Kbytes 页数：7 Pages

SEMTECH

先之科

丝印：042R5NL5；Package：PDFN-8-5X6X0.95-1.27；240A, 40V N-CHANNEL MOSFET

DESCRIPTION SVT042R5NL5(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using advanced LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This

文件：274.69 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：042R5NT；Package：TO-220-3L；240A, 40V N-CHANNEL MOSFET

DESCRIPTION SVT042R5NL5(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using advanced LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This

文件：274.69 Kbytes 页数：8 Pages

SILAN

士兰微