Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable for applications

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FREESCALEFreescale Semiconductor, Inc

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Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA25312B is a 2-stage high efficiency InGaP HBT driver amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable f

文件：342.39 Kbytes 页数：10 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides excep

文件：640.44 Kbytes 页数：19 Pages

恩XP

InGaP HBT Linear Amplifier

1 General description The MMZ25333B is a versatile 3−stage power amplifier targeted at driver and pre−driver applications for macro and micro base stations and final−stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing g

文件：353.89 Kbytes 页数：23 Pages

恩XP

Thin-Film Technology

文件：458.18 Kbytes 页数：20 Pages

AVX

Thin-Film Technology

文件：1.23832 Mbytes 页数：25 Pages

AVX

Package：0402（1005 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 薄膜电容器 描述：CAP THIN FILM 8.2PF 25V 0402

KSS

京瓷

Package：0402（1005 公制）；包装：卷带（TR） 类别：电容器 薄膜电容器 描述：CAP THIN FILM 8.2PF 25V 0402

KSS

京瓷