03N60C3数据表ic资料库存现货微碧半导体-114ic电子网

首页 >03N60C3>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
03N60C3	文件：3.20783 Mbytes Page：10 Pages	丝印：D2PAK；Package：TO-263；N-Channel 6 50V (D-S) Power MOSFET 文件：3.20783 Mbytes 页数：10 Pages	VBSEMI 微碧半导体	VBSEMI
SPB03N60C3	文件：308.23 Kbytes Page：14 Pages	Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) 文件：308.23 Kbytes 页数：14 Pages	INFINEON 英飞凌	INFINEON
SPD03N60C3	文件：290.73 Kbytes Page：12 Pages	Cool MOS Power Transistor Cool MOS™ Power Transistor Features • New revolutioanary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plaing; RoHS compliant • Qualified according to JEDEC for tar 文件：290.73 Kbytes 页数：12 Pages	INFINEON 英飞凌	INFINEON
SPP03N60C3	文件：308.23 Kbytes Page：14 Pages	Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) 文件：308.23 Kbytes 页数：14 Pages	INFINEON 英飞凌	INFINEON

更多03N60C3供应商更新时间2026-3-31 14:03:00