首页 >0330-COVD>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SMDSchottkyBarrierDiode Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction. -AEC-Q101Qualified&PPAP. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
Voltage-ControlledAGCAmplifier | TELEDYNETeledyne Technologies Incorporated 华特力科 | TELEDYNE | ||
CMOSDigitalImageSensor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
1/3?릋nchCMOSDigitalImageSensor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SMDSchottkyBarrierDiode Features IO=350mA VR=20Vto40V -Lowforwardvoltage -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction. -Lead-freedevice MechanicalData -Case:0603(1608)1005(2512)standardpackage,moldedplastic. -Terminals:Goldplated | ANACHIPAnachip Corp 易亨电子易亨电子股份有限公司 | ANACHIP | ||
SMDSchottkyBarrierDiode Features IO=350mA VR=20Vto40V -Lowforwardvoltage -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction. -Lead-freedevice MechanicalData -Case:0603(1608)1005(2512)standardpackage,moldedplastic. -Terminals:Goldplated | ANACHIPAnachip Corp 易亨电子易亨电子股份有限公司 | ANACHIP | ||
SMDSchottkyBarrierDiode Features IO=350mA VR=20Vto40V -Lowforwardvoltage -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction. -Lead-freedevice MechanicalData -Case:0603(1608)1005(2512)standardpackage,moldedplastic. -Terminals:Goldplated | ANACHIPAnachip Corp 易亨电子易亨电子股份有限公司 | ANACHIP | ||
Reflectors,Fibers,Optics | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫集团 | Balluff | ||
Single-EndedCordsets Basicfeatures Approval/Conformity CE cULus EAC WEEE | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫集团 | Balluff | ||
InductiveSensors | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫集团 | Balluff |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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