OptiMOSTM Power-MOSFET, 40 V

Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjoin

文件：1.60471 Mbytes 页数：13 Pages

INFINEON

英飞凌

丝印：014N03LS；Package：PG-TDSON-8；OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avala

文件：393.08 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：014N04LS；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 40 V

Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjoin

文件：1.60471 Mbytes 页数：13 Pages

INFINEON

英飞凌

丝印：014N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.04949 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：014N08NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：952.59 Kbytes 页数：11 Pages

INFINEON

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丝印：014N06NS；Package：PG-TO220-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：855.7 Kbytes 页数：11 Pages

INFINEON

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丝印：014N10N5；Package：PG-HSOG-8-1；OptiMOSTM 5 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Ideal for high frequency switching and sync. rec.

文件：1.3574 Mbytes 页数：11 Pages

INFINEON

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丝印：014N06CL；Package：LFPAK4；MOSFET – Power, Single N-Channel 60 V, 15 m, 37 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：345.57 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：014N08HL；Package：LFPAK33；MOSFET - Power, Single N-Channel 80 V, 13.9 m, 40 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：341.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：014N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

文件：445 Kbytes 页数：10 Pages

INFINEON

英飞凌