丝印：002.000；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：489.29 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：002X680FSG；Package：P-VQFN40-0505-0.40-005；TC35680FSG-002/TC35681FSG-002 Bluetooth® Low Energy IC

1.2. Features  Wireless communication function  Compliant with Bluetooth® Low Energy Ver.5.0 specification.  Built-in Bluetooth® baseband circuit  Built-in Bluetooth® RF circuit  Maximum output power: +8 dBm  Maximum RX sensitivity: -105.0 dBm (in case of Coded PHY and S = 8)  RSSI a

文件：1.13531 Mbytes 页数：91 Pages

TOSHIBA

东芝

丝印：002X681FSG；Package：P-VQFN40-0505-0.40-005；TC35680FSG-002/TC35681FSG-002 Bluetooth® Low Energy IC

1.2. Features  Wireless communication function  Compliant with Bluetooth® Low Energy Ver.5.0 specification.  Built-in Bluetooth® baseband circuit  Built-in Bluetooth® RF circuit  Maximum output power: +8 dBm  Maximum RX sensitivity: -105.0 dBm (in case of Coded PHY and S = 8)  RSSI a

文件：1.13531 Mbytes 页数：91 Pages

TOSHIBA

东芝

丝印：002AI01L；Package：LQFP；FemtoClock, Crystal-to-LVCMOS/LVTTL Frequency Synthesizer

文件：279.05 Kbytes 页数：15 Pages

IDT

丝印：002AI01L；Package：LQFP；FemtoClock, Crystal-to-LVCMOS/LVTTL Frequency Synthesizer

文件：279.05 Kbytes 页数：15 Pages

IDT

丝印：002N10MC；Package：DFNW8；MOSFET - Power, Single N-Channel 100 V, 2.3 m, 236 A

文件：320.56 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：002N10M；Package：POWER88；MOSFET - Power, Single N-Channel 100 V, 2.0 m, 236 A

文件：273.31 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

连接器配件

Littelfuse

力特

7极插座和插头

Littelfuse

力特

连接器配件

Littelfuse

力特