零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
STP1N120 | channel 1200V - 30廓 - 500mA - TO-220 Zener - protected SuperMESH??Power MOSFET Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
TrenchField-StopTechnologyIGBT DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·ACandDCmotorcontrols ·Power ·Lighting | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
5.3A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120BNDandtheHGT1S1N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
6.2A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120CNDandtheHGT1S1N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters • | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters • | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters • | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
1200VNPTSERIESN-CHANNELIGBT | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC |
详细参数
- 型号:
STP1N120
- 制造商:
STMicroelectronics
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
17+ |
TO220ABNONISOL |
31518 |
原装正品 可含税交易 |
询价 | ||
ST |
23+ |
TO-220 |
8795 |
询价 | |||
ST |
08+(pbfree) |
TO220ABNONISOL |
8866 |
询价 | |||
ST |
2015+ |
TO220A |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
ST |
1726+ |
TO-220 |
6528 |
只做进口原装正品现货,假一赔十! |
询价 | ||
ST |
23+ |
TOTO-220ABNONISOL |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
ST/意法 |
23+ |
TO220ABNONISOL |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ST/意法 |
23+ |
TO220ABNONISOL |
10000 |
公司只做原装正品 |
询价 | ||
ST |
23+ |
TO-220 |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
ST |
2022+ |
SOT-23 |
7300 |
原装现货 |
询价 |
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