首页 >STP20NF06L>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STP20NF06L | N-channel 60V - 0.06廓 - 20A - D2PAK/TO-220/TO-220FP STripFET??II Power MOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
N-channel60V-0.032OHM-24A-DPAK-IPAKSTripFETIIPowerMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel60V-0.06廓-20A-D2PAK/TO-220/TO-220FPSTripFET??IIPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL60V-0.032OHM-24ADPAKSTripFETTMIIPOWERMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=24A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
60VN-ChannelEnhancementModePowerMOSFET GeneralDescription TheSTD20NF06Lusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),25mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo | UMWUMW 友台友台半导体 | UMW | ||
N-channel60V-0.032OHM-24A-DPAK-IPAKSTripFETIIPowerMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Automotive-gradeN-channel60V,32mΩtyp.,24A,STripFETIIPowerMOSFETinaDPAKpackage Features •AEC-Q101qualified •Exceptionaldv/dtcapability •100avalanchetested •Lowgatecharge Applications •Switchingapplications Description ThisPowerMOSFEThasbeendevelopedusingSTMicroelectronics'unique STripFETprocess,whichisspecificallydesignedtominimizein | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel60V-0.06-20A-TO-220/TO-220FPSTripFETIIPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL60V-0.06ohm-20ATO-220/TO-220FPSTripFETIIPOWERMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel60V-0.06廓-20A-D2PAK/TO-220/TO-220FPSTripFET??IIPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Automotive-gradeN-channel60V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel60V-0.06-20A-TO-220/TO-220FPSTripFETIIPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL60V-0.06ohm-20ATO-220/TO-220FPSTripFETIIPOWERMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
详细参数
- 型号：
STP20NF06L
- 功能描述：
MOSFET N-Ch 60 Volt 20 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2022+ |
TO220 |
4891 |
原厂授权代理 价格绝对优势 |
询价 | ||
ST/意法半导体 |
22+ |
TO-220-3 |
6002 |
原装正品现货 可开增值税发票 |
询价 | ||
ST/意法半导体 |
2023 |
TO-220-3 |
6000 |
公司原装现货/支持实单 |
询价 | ||
ST(意法半导体) |
23+ |
TO-220 |
7863 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ST |
07+/08+ |
TO-220-3 |
1351 |
询价 | |||
ST/进口原 |
17+ |
TO-220 |
6200 |
询价 | |||
ST |
17+ |
TO-220 |
15000 |
原装现货热卖 |
询价 | ||
STMicro. |
23+ |
TO-220 |
7750 |
全新原装优势 |
询价 | ||
ST |
2015+ |
TO220A |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
ST |
16+ |
08+ |
1 |
原装现货假一罚十 |
询价 |
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