首页 >STB16N65M5>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STB16N65M5 | N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
STB16N65M5 | isc N-Channel Mosfet Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
STB16N65M5 | N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in D짼PAK, DPAK | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinD짼PAK,DPAK | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.230Ohm,12AMDmeshVPowerMOSFETinDPAK,DPAK Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor •FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.270ohm,12APowerFLAT8x8HV | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.230Ohm,12AMDmeshVPowerMOSFETinDPAK,DPAK Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
详细参数
- 型号：
STB16N65M5
- 功能描述：
MOSFET N-Ch MDMesh V 650V 0.270 Ohm 12A D2PAK
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
STMicroelectronics |
2019+ |
TO-263-3 |
65500 |
D2Pak(2Leads+Tab) |
询价 | ||
23+ |
N/A |
38160 |
正品授权货源可靠 |
询价 | |||
ST |
23+ |
D2PAK |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
STM原厂目录 |
23+ |
D2PAK |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
ST/意法 |
21+ |
TO-263 |
30000 |
只做正品原装现货 |
询价 | ||
STM |
1809+ |
TO-263 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ST/意法 |
TO-263 |
265209 |
假一罚十,原包原标签,常备现货 |
询价 | |||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 |
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