首页 >STB11NM60>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

STB11NM60

N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

Description TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60

N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60

isc N-Channel Mosfet Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB11NM60-1

N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

Description TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60A-1

N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?줡ower MOSFET

DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dt.TheadoptionoftheCompany’sproprietarystriptechniq

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60FD

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40Ω ■HIGHdv/dtANDAVALANCHECA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60FD

Isc N-Channel MOSFET Transistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB11NM60FD-1

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40Ω ■HIGHdv/dtANDAVALANCHECA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60FD-1

Isc N-Channel MOSFET Transistor

•FEATURES •WithTo-262(I2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB11NM60N

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60N-1

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60N-1

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60-1

N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60-1

isc N-Channel Mosfet Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB11NM60FD

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STB11NM60FD

N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60FD-1

N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60N

N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB11NM60N

isc N-Channel Mosfet Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB11NM60N-1

N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    STB11NM60

  • 制造商:

    STMicroelectronics

  • 功能描述:

    MOSFET N-Channel 600V 11A D2PAK

供应商型号品牌批号封装库存备注价格
ST
23+
TO262
6996
只做原装正品现货
询价
ST
23+
TO-263
8795
询价
LT
23+
MSOP10
8500
全新原装现货,公司只做原装。
询价
ST
2017+
TO262
35689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ST
2018+
TO262
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
ST
24+
TO-263
90000
一级代理商进口原装现货、假一罚十价格合理
询价
23+
N/A
46480
正品授权货源可靠
询价
ST
18+
TO-263
41200
原装正品,现货特价
询价
VB
2019
TO-263
55000
绝对原装正品假一罚十!
询价
ST
2020+
D2PAK
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
更多STB11NM60供应商 更新时间2024-5-22 15:39:00