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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
SCT30N120	文件：800.69 Kbytes Page：13 Pages	Low capacitance	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
FGA30N120FTD	文件：614.76 Kbytes Page：9 Pages	1200V,30ATrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGA30N120FTDTU	文件：614.76 Kbytes Page：9 Pages	1200V,30ATrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH30N120FTD	文件：588.2 Kbytes Page：9 Pages	Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH30N120FTDTU	文件：588.2 Kbytes Page：9 Pages	Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGW30N120H	文件：559.44 Kbytes Page：6 Pages	DiscreteIGBT(High-SpeedVseries)1200V/30A	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FGW30N120HD	文件：651.14 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)1200V/30A	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
G30N120CN	文件：113.21 Kbytes Page：8 Pages	75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
GW30N120KD	文件：359.23 Kbytes Page：13 Pages	30A-1200V-shortcircuitruggedIGBT	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
GWA30N120KD	文件：423.46 Kbytes Page：15 Pages	30A,1200VshortcircuitruggedIGBTwithUltrafastdiode Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH™p	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
HGTG30N120CN	文件：113.21 Kbytes Page：8 Pages	75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG30N120CN	文件：40.5 Kbytes Page：5 Pages	30A,1200VN-ChannelIGBT Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG30N120CN	文件：81.32 Kbytes Page：7 Pages	75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HIH30N120TF	文件：892.05 Kbytes Page：8 Pages	1200VFieldStopTrenchIGBT	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
IHW30N120R	文件：201.5 Kbytes Page：10 Pages	HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IHW30N120R	文件：977.75 Kbytes Page：12 Pages	IGBTwithmonolithicbodydiodeforsoftswitchingApplications	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IXDH30N120	文件：94.32 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M	IXYS IXYS Integrated Circuits Division	IXYS
IXDH30N120	文件：89.51 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode	IXYS IXYS Integrated Circuits Division	IXYS
IXDR30N120	文件：69.09 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage HighVoltageIGBTwithoptionalDiodeISOPLUS™package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features •NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability -	IXYS IXYS Integrated Circuits Division	IXYS
IXDT30N120	文件：94.32 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M	IXYS IXYS Integrated Circuits Division	IXYS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宇烁芯半导体科技有限公司	SCT30N120	ST	23+	HIP247	100000	全新原装	询价
中天科工半导体（深圳）有限公司	SCT30N120	STMicroelectronics	24+	HiP247?	30000	晶体管-分立半导体产品-原装正品	询价
深圳兆威电子有限公司	SCT30N120	ST/意法	23+	HIP-247	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳和润天下电子科技有限公司	SCT30N120	ST/意法半导体	22+	HiP-247-3	6008	原装正品现货可开增值税发票	询价
深圳市柏芯特电子科技有限公司	SCT30N120	ST/意法半导体	2023	HiP-247-3	6000	公司原装现货/支持实单	询价
深圳市高捷芯城科技有限公司	SCT30N120	ST(意法半导体)	23+	TO-247	8498	支持大陆交货,美金交易。原装现货库存。	询价
深圳市水星电子有限公司	SCT30N120	ST/意法	23+	TO247	37200	水星电子只做原装,支持一站式BOM配单	询价
深圳市恒创达实业有限公司	SCT30N120	ST	17+	TO247	6200	100%原装正品现货	询价
深圳市达恩科技有限公司	SCT30N120	STMicroelectronics	18+	NA	3000	进口原装正品优势供应QQ3171516190	询价
深圳市锐视安科技有限公司	SCT30N120	ST	1449+	TO-247	18	原装正品现货,可开发票,假一赔十	询价

更多SCT30N120供应商更新时间2024-5-16 14:52:00

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