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HIH30N120TF

1200V Field Stop Trench IGBT

SEMIHOW

SemiHow Co.,Ltd.

FGA30N120FTD

1200V,30ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGA30N120FTDTU

1200V,30ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGH30N120FTD

Fieldstoptrenchtechnology

GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGH30N120FTDTU

Fieldstoptrenchtechnology

GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGW30N120H

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFUJI CORPORATION

株式会社FUJI

FGW30N120HD

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFUJI CORPORATION

株式会社FUJI

G30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

GW30N120KD

30A-1200V-shortcircuitruggedIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GWA30N120KD

30A,1200VshortcircuitruggedIGBTwithUltrafastdiode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH™p

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG30N120CN

30A,1200VN-ChannelIGBT

Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IHW30N120R

IGBTwithmonolithicbodydiodeforsoftswitchingApplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IHW30N120R

HighSpeed2-Technology

•Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IXDH30N120

HighVoltageIGBTwithoptionalDiode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Integrated Circuits Division

IXDH30N120

HighVoltageIGBTwithoptionalDiode

IXYS

IXYS Integrated Circuits Division

IXDR30N120

HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage

HighVoltageIGBTwithoptionalDiodeISOPLUS™package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features •NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability -

IXYS

IXYS Integrated Circuits Division

IXDT30N120

HighVoltageIGBTwithoptionalDiode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Integrated Circuits Division

IXDT30N120

HighVoltageIGBTwithoptionalDiode

IXYS

IXYS Integrated Circuits Division

供应商型号品牌批号封装库存备注价格
HONEYWELL
13+
2238
原装分销
询价
HONEY
16+
原厂封装
2000
原装现货假一罚十
询价
HONEYWELL/霍尼韦尔
21+ROHS
SIP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HONEYWELL/霍尼韦尔
2021+
SIP
2056
原装正品 公司现货 价格优惠
询价
MAX
2023+环保现货
标准封装
2500
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
HONEYWELL/霍尼韦尔
1823+
15
全新原装低价热销
询价
Honeywell霍尼韦尔
20+
传感器
16600
集成式湿度传感器,支持样品
询价
美国HONEYWELL
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
Honeywell
23+
sensor
5000
原装正品,假一罚十
询价
HONEY
21+
65230
询价
更多HIH30N120TF供应商 更新时间2024-5-21 9:00:00