零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
G30N120CN | 75A, 1200V, NPT Series N-Channel IGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
1200V,30ATrenchIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
1200V,30ATrenchIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DiscreteIGBT(High-SpeedVseries)1200V/30A | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
DiscreteIGBT(High-SpeedVseries)1200V/30A | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
30A-1200V-shortcircuitruggedIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
30A,1200VshortcircuitruggedIGBTwithUltrafastdiode Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH™p | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
30A,1200VN-ChannelIGBT Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
1200VFieldStopTrenchIGBT | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBTwithmonolithicbodydiodeforsoftswitchingApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M | IXYS IXYS Integrated Circuits Division | IXYS | ||
HighVoltageIGBTwithoptionalDiode | IXYS IXYS Integrated Circuits Division | IXYS | ||
HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage HighVoltageIGBTwithoptionalDiodeISOPLUS™package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features •NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability - | IXYS IXYS Integrated Circuits Division | IXYS | ||
HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M | IXYS IXYS Integrated Circuits Division | IXYS | ||
HighVoltageIGBTwithoptionalDiode | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号:
G30N120CN
- 制造商:
FAIRCHILD
- 制造商全称:
Fairchild Semiconductor
- 功能描述:
75A, 1200V, NPT Series N-Channel IGBT
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HARRIS哈里斯 |
23+ |
TO-3P |
18000 |
询价 | |||
HARRIS |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
23+ |
N/A |
90250 |
正品授权货源可靠 |
询价 | |||
FSC |
0242+ |
TO-3P |
40 |
现货 |
询价 | ||
FSC |
21+ |
TO-3P |
20000 |
原厂订货价格优势,可开13%的增值税票 |
询价 | ||
FSC |
TO-3P |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
ON-安森美 |
24+25+/26+27+ |
TO-247-3 |
57500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
HARRIS |
23+ |
TO-3P |
6680 |
全新原装优势 |
询价 | ||
WXDH |
2019+ |
TO-247 |
9000 |
全新原装正品现货 |
询价 |
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