KFG5616UTM-PIBO技术资料参数市场行情TI-114ic电子网

首页 >KFG5616UTM-PIBO>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
5616	文件：87.16 Kbytes Page：6 Pages	2-FUNCTION,4-DIGITLCDAUTOMOTIVECLOCK-PROGRAMMABLE FEATURES ■DigitalTuningofCrystalFrequency ■PROMforStoringFrequencyCorrectionInformation ■12or24HourTimekeepingOption ■FlashingColon ■TwoSwitchesControlAllSettingFunctions ■HighNoiseImmunity ■InternalPower-UpResetCircuitry ■InternalVoltageRegulation	Allegro Allegro MicroSystems	Allegro
5616-RC	文件：428.21 Kbytes Page：1 Pages	HighCurrentChokes	BournsBourns Inc. 伯恩斯（邦士）	Bourns
ALC5616	文件：1.55994 Mbytes Page：104 Pages	Ultra-LowPowerAudioCODECforMobileDevices	REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司	REALTEK
ALC5616-CG	文件：1.55994 Mbytes Page：104 Pages	Ultra-LowPowerAudioCODECforMobileDevices	REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司	REALTEK
ALC5616-CGT	文件：1.55994 Mbytes Page：104 Pages	Ultra-LowPowerAudioCODECforMobileDevices	REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司	REALTEK
AOZ5616QI	文件：2.28076 Mbytes Page：17 Pages	High-Current,High-PerformanceDrMOSPowerModule GeneralDescription TheAOZ5616QIisahighefficiencysynchronousbuck powerstagemoduleconsistingoftwoasymmetrical MOSFETsandanintegrateddriver.TheMOSFETsare individuallyoptimizedforoperationinthesynchronous buckconfiguration.TheHigh-SideMOSFETisoptimized toachieve	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
BCP5616	文件：150.69 Kbytes Page：9 Pages	LowpowerNPNTransistor SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
BCP5616Q	文件：395.23 Kbytes Page：8 Pages	NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616Q	文件：380.76 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616QTA	文件：380.76 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616QTA	文件：395.23 Kbytes Page：8 Pages	NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616QTC	文件：395.23 Kbytes Page：8 Pages	NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616QTC	文件：380.76 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616T	文件：557.35 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616TA	文件：131.1 Kbytes Page：7 Pages	NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616TC	文件：131.1 Kbytes Page：7 Pages	NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616TQ	文件：556.97 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616TQTA	文件：556.97 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616TQTC	文件：556.97 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCX5616	文件：591.06 Kbytes Page：2 Pages	NPNmediumpowertransistor	SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司	SKTECHNOLGY

12 3 4 5 6 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	KFG5616UTM-PIBO	SAMSUNG	23+	TSSOP	12300	全新原装真实库存含13点增值税票!	询价
深圳市晴轩时代电子有限公司	KFG5616UTM-PIBO	SAMSUNG	21+	TSSOP	600	原装现货。假一赔十	询价
深圳市胜彬电子有限公司	KFG5616UTM-PIBO	SAMSUNG	22+	TSSOP	8000	原装正品支持实单	询价
深圳市宏世佳电子科技有限公司	KFG5616UTM-PIBO	SAMSUNG	2023+	TSSOP	3715	全新原厂原装产品、公司现货销售	询价
深圳市锦喆鸿电子有限公司	KFG8G16Q5M-BEB1	SAMSUNG	21+	BGA	12588	原装正品,自己库存假一罚十	询价
深圳市创芯联盈电子有限公司	KFG8G16Q5M-BEB1	SAMSUNG	500	BGA	37	1942+	询价
深圳市科恒伟业电子有限公司	KFG8G16Q5M-BEB1	SAMSUNG/三星	1922+	BGA	6852	只做原装正品现货!或订货假一赔十!	询价
深圳市湘达电子有限公司	KFG8G16Q5M-BEB1	SAMSUNG/三星	20+	BGA	2800	绝对全新原装现货,欢迎来电查询	询价
北京逸博微科技有限公司	KFG8G16Q5M-BEB1	SAMSUNG	11+10+	BGA	135	全新原装现货	询价
深圳市纳艾斯科技有限公司	KFG8G16Q5M-BEB1	SAMSUNG	2020+	BGA	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价

更多KFG5616UTM-PIBO供应商更新时间2024-5-24 14:22:00

相关规格书

相关库存