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K4S561632A

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Ais268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung Group

三星三星半导体

K4S561632B

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

TheK4S561632Bis268,435,456bitssynchronoushighdatarate DynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleoneveryclo

SamsungSamsung Group

三星三星半导体

K4S561632C

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung Group

三星三星半导体

K4S561632C-TC

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung Group

三星三星半导体

K4S561632D

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Dis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung Group

三星三星半导体

K4S561632E

256MbE-dieSDRAMSpecification54pinsTSOP-II

GENERALDESCRIPTION TheK4S560432E/K4S560832Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththe

SamsungSamsung Group

三星三星半导体

K4S561632E

256MbE-dieSDRAMSpecification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

三星三星半导体

K4S561632H

SDRAMProductGuide

SamsungSamsung Group

三星三星半导体

K4S561632J

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

K4S561632J

SDRAMProductGuide

SamsungSamsung Group

三星三星半导体

K4S561632J

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

三星三星半导体

K4S561632N

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

供应商型号品牌批号封装库存备注价格
SAMSUNG
16+
TSOP
300
原装现货假一罚十
询价
SAMSUNG
6000
面议
19
TSOP
询价
SAMSUNG/三星
TSOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SAMSUNG
2023+
TSOP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
SAMSUNG
21+
TSOP
35200
一级代理/放心采购
询价
SAMSANG
19+
TSOP
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SAMSUNG
22+
TSOP
360000
进口原装房间现货实库实数
询价
SAMSUNG
22+
TSOP
8000
原装正品支持实单
询价
SAMSUNG
2023+
TSOP
5378
全新原厂原装产品、公司现货销售
询价
SAMSUNG
23+
TSOP
8000
只做原装现货
询价
更多K4S561632C-TCIL供应商 更新时间2024-6-10 8:00:00