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K4S561632E

256Mb E-die SDRAM Specification 54pin sTSOP-II

GENERALDESCRIPTION TheK4S560432E/K4S560832Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththe

SamsungSamsung Group

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K4S561632E

256Mb E-die SDRAM Specification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

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K4S561632E-TC60

256Mb E-die SDRAM Specification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

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K4S561632E-TC75

256Mb E-die SDRAM Specification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

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K4S561632E-TL60

256Mb E-die SDRAM Specification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

三星三星半导体

K4S561632E-TL75

256Mb E-die SDRAM Specification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

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K4S561632E-UC60

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

SamsungSamsung Group

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K4S561632E-UC75

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

SamsungSamsung Group

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K4S561632E-UL60

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

SamsungSamsung Group

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K4S561632E-UL75

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

SamsungSamsung Group

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K4S561632A

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Ais268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung Group

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K4S561632B

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

TheK4S561632Bis268,435,456bitssynchronoushighdatarate DynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleoneveryclo

SamsungSamsung Group

三星三星半导体

K4S561632C

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung Group

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K4S561632C-TC

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung Group

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K4S561632D

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Dis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung Group

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K4S561632H

SDRAMProductGuide

SamsungSamsung Group

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K4S561632J

SDRAMProductGuide

SamsungSamsung Group

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K4S561632J

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

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K4S561632J

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

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K4S561632N

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

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详细参数

  • 型号:

    K4S561632E

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    256Mb E-die SDRAM Specification

供应商型号品牌批号封装库存备注价格
SAMS
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SAMSUNG(三星)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
SAMSUNG(三星)
23+
NA/
8735
原厂直销,现货供应,账期支持!
询价
三星
23+24
TSOP54
53870
原装正品,原盘原标,提供BOM一站式配单
询价
SAMSUNG
2015+
TSOP-54
18998
专业代理SDRAM(16X16)
询价
SAMSUNG
23+
TSOP-54
18000
询价
SAMSUNG
15+
TSSOP54
11560
全新原装,现货库存,长期供应
询价
SAMSUNG
06+
TSOP54
3300
全新原装进口自己库存优势
询价
SAMSUNG
1305+
原装假一赔十
12000
公司特价原装现货
询价
SAMSUNG
2013+
TSSOP
10
特价热销现货库存
询价
更多K4S561632E供应商 更新时间2024-5-31 15:00:00