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K4S561632N

Consumer Memory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

K4S561632A

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Ais268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung Group

三星三星半导体

K4S561632B

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

TheK4S561632Bis268,435,456bitssynchronoushighdatarate DynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleoneveryclo

SamsungSamsung Group

三星三星半导体

K4S561632C

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung Group

三星三星半导体

K4S561632C-TC

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung Group

三星三星半导体

K4S561632D

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Dis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung Group

三星三星半导体

K4S561632E

256MbE-dieSDRAMSpecification54pinsTSOP-II

GENERALDESCRIPTION TheK4S560432E/K4S560832Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththe

SamsungSamsung Group

三星三星半导体

K4S561632E

256MbE-dieSDRAMSpecification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

三星三星半导体

K4S561632H

SDRAMProductGuide

SamsungSamsung Group

三星三星半导体

K4S561632J

SDRAMProductGuide

SamsungSamsung Group

三星三星半导体

K4S561632J

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

三星三星半导体

K4S561632J

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

详细参数

  • 型号:

    K4S561632N

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    256Mb N-die SDRAM

供应商型号品牌批号封装库存备注价格
SAMSUMG
2020+
TSOP
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
SAMSUNG
2014+
TSOP56
494
现货原装库存热卖
询价
SAMSUNG
17+
TSOP
6200
100%原装正品现货
询价
SAMSUNG
2022
TSOP
2550
原厂原装正品,价格超越代理
询价
SAMSUNG
2020+
TSOP54
5186
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SAMSUNG
16+
TSOP
8800
进口原装大量现货热卖中
询价
SAMSUNG
22+
TSOP
6980
原装现货,可开13%税票
询价
SAMSUNG
TSOP54
1283
正品原装--自家现货-实单可谈
询价
SAMSUNG
23+
SOP
9680
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
SAMSUNG
23+
TSOP
12000
原装正品,假一罚十
询价
更多K4S561632N供应商 更新时间2024-6-7 14:16:00