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K4S561632H

SDRAM Product Guide

SamsungSamsung semiconductor

三星三星半导体

K4S561632A

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Ais268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半导体

K4S561632B

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

TheK4S561632Bis268,435,456bitssynchronoushighdatarate DynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleoneveryclo

SamsungSamsung semiconductor

三星三星半导体

K4S561632C

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung semiconductor

三星三星半导体

K4S561632C-TC

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung semiconductor

三星三星半导体

K4S561632D

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Dis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半导体

K4S561632E

256MbE-dieSDRAMSpecification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半导体

K4S561632E

256MbE-dieSDRAMSpecification54pinsTSOP-II

GENERALDESCRIPTION TheK4S560432E/K4S560832Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththe

SamsungSamsung semiconductor

三星三星半导体

K4S561632J

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半导体

K4S561632J

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半导体

K4S561632J

SDRAMProductGuide

SamsungSamsung semiconductor

三星三星半导体

K4S561632N

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K4S561632H

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    SDRAM Product Guide

供应商型号品牌批号封装库存备注价格
SAMSUNG(三星)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
SAMSUNG
24+
TSOP54
13500
免费送样原盒原包现货一手渠道联系
询价
Samsung
21+
TSOP54
12588
原装正品,量大可定
询价
SAMSUNG
2020+
TSOP
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
SAMSUNG(三星)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
SAMSUNG/三星
23+
TSOP54
5000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
SAMSUNG/三星
23+
TSOP54
9920
原装正品,支持实单
询价
SAMSUNG/三星
23+
TSOP54
98900
原厂原装正品现货!!
询价
SAMSUNG/三星
23+
TSOP54
6000
只做原装
询价
SAMSUNG(三星)
23+
NA/
8735
原厂直销,现货供应,账期支持!
询价
更多K4S561632H供应商 更新时间2024-10-31 16:28:00