首页 >IXGT24N60C>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IXGT24N60C | HiPerFAST IGBT Lightspeed Series Features •InternationalstandardpackagesJEDECTO-247andsurfacemountableTO-268 •HighfrequencyIGBT •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •PFCcircuits •Uninterruptiblepowe | IXYS IXYS Integrated Circuits Division | IXYS | |
IXGT24N60C | 包装:管件 封装/外壳:TO-268-3,D³Pak(2 引线 + 接片),TO-268AA 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 48A 150W TO268 | IXYS IXYS Integrated Circuits Division | IXYS | |
HiPerFAST IGBT with Diode Lightspeed Series Features •InternationalstandardpackagesJEDECTO-247andsurfacemountableTO-268 •HighfrequencyIGBT •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity •FastrecoveryexpitaxialDiode(FRED) -softrecoverywithlowIRM | IXYS IXYS Integrated Circuits Division | IXYS | ||
包装:管件 封装/外壳:TO-268-3,D³Pak(2 引线 + 接片),TO-268AA 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 48A 150W TO268 | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
N-ChannelPowerMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.185Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤185mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PreliminaryTechnicalInformation | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PreliminaryTechnicalInformation | IXYS IXYS Integrated Circuits Division | IXYS | ||
PreliminaryTechnicalInformation | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PreliminaryTechnicalInformation | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFASTIGBTLightspeedSeries | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFASTIGBT HiPerFAST™IGBTwithDiodeCombiPack Features lInternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD lIGBTandanti-parallelFREDinonepackage l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forminimumon-stateconductionlosses lM | IXYS IXYS Integrated Circuits Division | IXYS |
产品属性
- 产品编号:
IXGT24N60C
- 制造商:
IXYS
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 系列:
HiPerFAST™, Lightspeed™
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
2.5V @ 15V,24A
- 开关能量:
240µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
15ns/75ns
- 测试条件:
480V,24A,10 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
TO-268-3,D³Pak(2 引线 + 接片),TO-268AA
- 供应商器件封装:
TO-268AA
- 描述:
IGBT 600V 48A 150W TO268
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-268 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-268 |
10000 |
公司只做原装正品 |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
TO268 |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
TO268 |
13880 |
公司只售原装,支持实单 |
询价 | ||
IXYS |
23+ |
TO268 |
9000 |
原装正品,支持实单 |
询价 | ||
IXYS |
2022+ |
TO-268 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IXYS/艾赛斯 |
22+ |
TO-268 |
25000 |
只做原装进口现货,专注配单 |
询价 |
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