首页 >IXGP20N120B>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IXGP20N120B | High Voltage IGBT with Diode | IXYS IXYS Integrated Circuits Division | IXYS | |
IXGP20N120B | 包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 40A 190W TO220 | IXYS IXYS Integrated Circuits Division | IXYS | |
GenX3 1200V IGBT HighSpeedLowVsatPTIGBTs3-20kHzSwitching Features ●OptimizedforLowConductionandSwitchingLosses ●SquareRBSOA ●InternationalStandardPackages Applications ●PowerInverters ●UPS ●MotorDrives ●SMPS ●PFCCircuits ●WeldingMachines ●InductiveHeating Advantages ● | IXYS IXYS Integrated Circuits Division | IXYS | ||
High Voltage IGBT with Diode | IXYS IXYS Integrated Circuits Division | IXYS | ||
包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 36A 180W TO220 | IXYS IXYS Integrated Circuits Division | IXYS | ||
包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 40A 190W TO220 | IXYS IXYS Integrated Circuits Division | IXYS | ||
Generalpurposeinverters | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
Insulated-GateBipolarTransistorinaTO-3PPlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
1200V,20ATrenchIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
1200V,20ATrenchIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
N-ChannelEnhancementInsulatedGateBipolarTransistor Features •Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V •Highinputimpedance •Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, •Highspeedswitching Applications •InductionheatingandMicrowaveoven •Softswitchingapplications | HuashanHuashan Electronic Devices Co 华汕电子器件 | Huashan | ||
34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
产品属性
- 产品编号:
IXGP20N120B
- 制造商:
IXYS
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
3.4V @ 15V,20A
- 开关能量:
2.1mJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
25ns/150ns
- 测试条件:
960V,20A,10 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3
- 供应商器件封装:
TO-220-3
- 描述:
IGBT 1200V 40A 190W TO220
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS |
2019+ |
TO-220AB |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
IXYS |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-220 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
TO220AB |
13880 |
公司只售原装,支持实单 |
询价 | ||
IXYS/艾赛斯 |
21+ROHS |
TO-TO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
询价 |
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