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IXGP20N120B

High Voltage IGBT with Diode

IXYS

IXYS Integrated Circuits Division

IXGP20N120B

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 40A 190W TO220

IXYS

IXYS Integrated Circuits Division

IXGP20N120B3

GenX3 1200V IGBT

HighSpeedLowVsatPTIGBTs3-20kHzSwitching Features ●OptimizedforLowConductionandSwitchingLosses ●SquareRBSOA ●InternationalStandardPackages Applications ●PowerInverters ●UPS ●MotorDrives ●SMPS ●PFCCircuits ●WeldingMachines ●InductiveHeating Advantages ●

IXYS

IXYS Integrated Circuits Division

IXGP20N120BD1

High Voltage IGBT with Diode

IXYS

IXYS Integrated Circuits Division

IXGP20N120B3

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 36A 180W TO220

IXYS

IXYS Integrated Circuits Division

IXGP20N120BD1

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 40A 190W TO220

IXYS

IXYS Integrated Circuits Division

20N120C

Generalpurposeinverters

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

BRG20N120D

Insulated-GateBipolarTransistorinaTO-3PPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FGA20N120FTD

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGA20N120FTDTU

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G20N120

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G20N120

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGH20N120A

N-ChannelEnhancementInsulatedGateBipolarTransistor

Features •Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V •Highinputimpedance •Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, •Highspeedswitching Applications •InductionheatingandMicrowaveoven •Softswitchingapplications

HuashanHuashan Electronic Devices Co

华汕电子器件

HGTG20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG20N120CN

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG20N120CND

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTG20N120CND

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

产品属性

  • 产品编号:

    IXGP20N120B

  • 制造商:

    IXYS

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    3.4V @ 15V,20A

  • 开关能量:

    2.1mJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    25ns/150ns

  • 测试条件:

    960V,20A,10 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220-3

  • 描述:

    IGBT 1200V 40A 190W TO220

供应商型号品牌批号封装库存备注价格
IXYS
2019+
TO-220AB
65500
原装正品货到付款,价格优势!
询价
IXYS
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS
1809+
TO-220
326
就找我吧!--邀您体验愉快问购元件!
询价
IXYS/艾赛斯
23+
TO-220
10000
公司只做原装正品
询价
IXYS
22+
NA
18
加我QQ或微信咨询更多详细信息,
询价
IXYS
22+
TO220AB
9000
原厂渠道,现货配单
询价
IXYS
21+
TO220AB
13880
公司只售原装,支持实单
询价
IXYS/艾赛斯
21+ROHS
TO-TO-220
12300
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IXYS/艾赛斯
23+
TO-220
6000
原装正品,支持实单
询价
更多IXGP20N120B供应商 更新时间2024-5-21 14:12:00