G20N120中文资料PDF规格书
G20N120规格书详情
45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
Features
45A, 1200V, TC = 25oC
1200V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150oC
Short Circuit Rating
Low Conduction Loss
产品属性
- 型号：
G20N120
- 制造商：
INTERSIL
- 制造商全称：
Intersil Corporation
- 功能描述：
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
TO-3P |
65480 |
询价 | ||||
台产 |
TO-247 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
台产 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
23+ |
TO-247 |
8000 |
只做原装现货 |
询价 | ||
HARRIS/哈里斯 |
23+ |
TO-3P |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
HARRIS |
99+ |
TO-3P |
76 |
询价 | |||
哈里斯 |
06+ |
TO-247 |
3500 |
原装 |
询价 | ||
23+ |
N/A |
59510 |
正品授权货源可靠 |
询价 | |||
FSC |
1746+ |
TO247 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
