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G20N120中文资料PDF规格书

G20N120
厂商型号

G20N120

功能描述

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件大小

121.05 Kbytes

页面数量

8

生产厂商 Fairchild Semiconductor
企业简称

Fairchild仙童半导体

中文名称

飞兆/仙童半导体公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2024-5-15 17:53:00

G20N120规格书详情

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Features

• 63A, 1200V, TC= 25oC

• 1200V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . . . 340ns at TJ= 150oC

• Short Circuit Rating

• Low Conduction Loss

产品属性

  • 型号:

    G20N120

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

供应商 型号 品牌 批号 封装 库存 备注 价格
IR
22+
NA
3600
全新原装品牌专营
询价
IR
2023+
TO-247
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
HARRIS/哈里斯
23+
TO-3P
90000
只做原厂渠道价格优势可提供技术支持
询价
FAI
2018+
TO252
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
哈里斯
06+
TO-247
3500
原装
询价
23+
TO-3P
65480
询价
HARRIS
99+
TO-3P
76
询价
HARRIS/哈里斯
2022+
TO220
57550
询价
SANYO
2023+
TO-252
700000
柒号芯城跟原厂的距离只有0.07公分
询价
进口原装
23+
TO-252
16390
全新原装现货
询价