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IXFN27N80	文件：162.51 Kbytes Page：4 Pages	HiPerFETTM Power MOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFN27N80	文件：168.09 Kbytes Page：4 Pages	HiPerFET Power MOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFN27N80	文件：157.32 Kbytes Page：4 Pages	HiPerFET Power MOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFN27N80Q	文件：108.43 Kbytes Page：2 Pages	HiPerFET Power MOSFETs Q-Class SingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackage •EpoxymeetUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •IXYSadvancedlowQgprocess •Ruggedpolysilicongatecellstructure	IXYS IXYS Integrated Circuits Division	IXYS
IXFK27N80	文件：162.51 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFK27N80	文件：157.32 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFK27N80	文件：168.09 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFK27N80	文件：328.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK27N80Q	文件：329.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK27N80Q	文件：55.88 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti	IXYS IXYS Integrated Circuits Division	IXYS
IXFR27N80	文件：330.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR27N80Q	文件：55.88 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti	IXYS IXYS Integrated Circuits Division	IXYS
IXFX27N80	文件：368.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX27N80Q	文件：96.66 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS	IXYS IXYS Integrated Circuits Division	IXYS
IXFX27N80Q	文件：55.88 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti	IXYS IXYS Integrated Circuits Division	IXYS

详细参数

型号：
IXFN27N80
功能描述：
MOSFET 800V 27A
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市斌腾达科技有限公司	IXFN27N80	IXYS	19+/20+	SOT-227B	1000	主打产品价格优惠.全新原装正品	询价
深圳市河锋鑫科技有限公司	IXFN27N80	IXYS/艾赛斯	1580+	MODULE	550	原装正品可含税交易	询价
深圳市恒佳微电子有限公司	IXFN27N80	IXYS/艾赛斯	21+	MODULE	550	十年专营,原装现货,假一赔十	询价
深圳市拓亿芯电子有限公司	IXFN27N80	IXYS/艾赛斯	23+	MODULE	12500	全新原装现货,假一赔十	询价
深圳市勤思达科技有限公司	IXFN27N80	IXYS场效应	23+		120	专业模块销售,欢迎咨询	询价
深圳市昌和盛利电子有限公司	IXFN27N80	IXYS	23+	模块	3562		询价
深圳市毅创腾电子科技有限公司	IXFN27N80	IXYS	23+	模块	320	全新原装正品,量大可订货!可开17%增值票!价格优势!	询价
深圳市凯斯宇科技有限公司	IXFN27N80	IXYS	2022	SOT-227B	58	原厂原装正品,价格超越代理	询价
深圳市博浩通科技有限公司	IXFN27N80	IXYS	23+	MOSFETN-CH800V27ASOT-227	1731	专业代理销售半导体模块,能提供更多数量	询价
齐创科技(上海,北京,青岛)有限公司	IXFN27N80	IXYS	23+	模块	5000	原装正品,假一罚十	询价

更多IXFN27N80供应商更新时间2024-6-14 13:02:00

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