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IXFH14N60

HIPERFET Power MOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFH14N60P

PolarHV HiperFET Power MOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver

IXYS

IXYS Integrated Circuits Division

IXFH14N60P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH14N60P3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.54Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH14N60P

Power MOSFET

IXYS

IXYS Integrated Circuits Division

IXFH14N60P3

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

IXYS

IXYS Integrated Circuits Division

14N60

DrainCurrentID=14A@TC=25C

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

14N60-ML

14A,600VN-CHANNELPOWERMOSFET

FEATURES *RDS(ON)≤0.55Ω@VGS=10V,ID=7.0A *Fastswitchingcapability *Avalancheenergytested *Improveddv/dtcapability,highruggedness

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

14N60-TC

14A,600VN-CHANNELPOWERMOSFET

FEATURES *RDS(ON)≤0.6Ω@VGS=10V,ID=7.0A *Fastswitchingcapability *Avalancheenergyspecified *Improveddv/dtcapability,highruggedness

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

DAM14N60S

N-ChannelEnhancementModeMOSFET

DACO

DACO

FDP14N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.49Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFA14N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFA14N60P

PolarHVHiperFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver

IXYS

IXYS Integrated Circuits Division

IXFA14N60P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFC14N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFC14N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.63Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFP14N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=550mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFP14N60P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFP14N60P

PolarHVHiperFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver

IXYS

IXYS Integrated Circuits Division

IXTA14N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IXFH14N60

  • 制造商:

    IXYS

  • 制造商全称:

    IXYS Corporation

  • 功能描述:

    HIPERFET Power MOSFTETs

供应商型号品牌批号封装库存备注价格
IXYS/艾赛斯
17+
247
31518
原装正品 可含税交易
询价
IXYS
17+
TO-3P
6200
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IXYS
23+
TO-3P
6000
专做原装正品,假一罚百!
询价
IXYS
1746+
TO247
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
IXYS
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
询价
IXYS
18+
TO-247
2050
公司大量全新原装 正品 随时可以发货
询价
IXYS
23+
TO-247
564
询价
IXYS/艾赛斯
23+
TO-3P
90000
只做原厂渠道价格优势可提供技术支持
询价
IXYS/艾赛斯
2021+
TO-3P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多IXFH14N60供应商 更新时间2024-6-3 14:03:00