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MDF12N50FTH

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

MDF12N50TH

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF12N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDP12N50

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50B

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50BTH

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDP12N50F

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

MDP12N50FTH

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

MDP12N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDP12N50TH

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MSAER12N50A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSAFR12N50A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SIHA12N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHA12N50E

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Lowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Comput

VishayVishay Siliconix

威世科技

SIHA12N50E

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Lowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Computing

VishayVishay Siliconix

威世科技

SIHB12N50C

PowerMOSFETs

FEATURES •LowFigure-of-MeritRonxQg •100AvalancheTested •GateChargeImproved •Trr/QrrImproved •ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技

SIHB12N50C

PowerMOSFET

FEATURES •LowFigure-of-MeritRonxQg •100AvalancheTested •GateChargeImproved •Trr/QrrImproved •ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技

SIHB12N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHB12N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IXFA12N50P

  • 功能描述:

    MOSFET 500V 12A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
24+
TO-263(IXFA)
30000
晶体管-分立半导体产品-原装正品
询价
IXYS/艾赛斯
23+
TO-263
26008
原装正品 华强现货
询价
IXYS
23+
TO-263
12300
全新原装真实库存含13点增值税票!
询价
IXYS/艾赛斯
17+
TO-263
31518
原装正品 可含税交易
询价
IXYS
23+
DIP18
6000
15年原装正品企业
询价
Littelfuse/IXYS
23+
TO-263
7828
支持大陆交货,美金交易。原装现货库存。
询价
IXYS
08+(pbfree)
TO-263
8866
询价
IXYS
23+
TO-263-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
IXYS
20+
TO-263-3
90000
全新原装正品/库存充足
询价
JINGDAO/晶导微
23+
SMBF
69820
终端可以免费供样,支持BOM配单!
询价
更多IXFA12N50P供应商 更新时间2024-6-7 10:11:00