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IXFA12N50P

Polar Power MOSFET HiperFET

Polar™PowerMOSFETHiperFET™ N-ChannelEnhancementModeAvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXFA12N50P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

12N50

12Amps,500VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC12N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanch

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

12N50

12A,500VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

12N50

FastSwitching

•FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max) •FastSwitching •APPLICATIONS •Switchmodepowersupply.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

12N50C

PowerMOSFETs

FEATURES •LowFigure-of-MeritRonxQg •100AvalancheTested •GateChargeImproved •Trr/QrrImproved •ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技

12N50ES

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

12N50K-MT

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

AM12N50P

N-Channel500-V(D-S)MOSFET

AnalogPower

Analog Power

AOB12N50

500V,12AN-ChannelMOSFET

GeneralDescription TheAOT12N50&AOB12N50&AOTF12N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedav

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB12N50

500V,12AN-ChannelMOSFET

GeneralDescription TheAOT12N50&AOB12N50&AOTF12N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedav

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB12N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB12N50

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOB12N50L

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOB12N50L

500V,12AN-ChannelMOSFET

GeneralDescription TheAOT12N50&AOB12N50&AOTF12N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedav

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT12N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT12N50

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOT12N50

500V,12AN-ChannelMOSFET

GeneralDescription TheAOT12N50&AOB12N50&AOTF12N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedav

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT12N50

500V,12AN-ChannelMOSFET

GeneralDescription TheAOT12N50&AOB12N50&AOTF12N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedav

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT12N50

500V,12AN-ChannelMOSFET

GeneralDescription TheAOT12N50&AOB12N50&AOTF12N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedav

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

详细参数

  • 型号:

    IXFA12N50P

  • 功能描述:

    MOSFET 500V 12A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
24+
TO-263(IXFA)
30000
晶体管-分立半导体产品-原装正品
询价
IXYS
23+
TO-263
12300
全新原装真实库存含13点增值税票!
询价
IXYS/艾赛斯
17+
TO-263
31518
原装正品 可含税交易
询价
IXYS
23+
DIP18
6000
15年原装正品企业
询价
Littelfuse/IXYS
23+
TO-263
7828
支持大陆交货,美金交易。原装现货库存。
询价
IXYS
08+(pbfree)
TO-263
8866
询价
IXYS
23+
TO-263-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
23+
N/A
46080
正品授权货源可靠
询价
IXYS
20+
TO-263-3
90000
全新原装正品/库存充足
询价
JINGDAO/晶导微
23+
SMBF
69820
终端可以免费供样,支持BOM配单!
询价
更多IXFA12N50P供应商 更新时间2024-5-17 14:14:00