首页 >IXFC26N50P>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IXFC26N50P | PolarHV HiPerFET Power MOSFET ISOPLUS 220 N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( Applications DC-DCconverters | IXYS IXYS Integrated Circuits Division | IXYS | |
IXFC26N50P | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
26A,500VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC26N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETMOSFETsISOPLUS220 ElectricallyIsolatedBackSurface N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS™Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AvalancheRatedFastInstrinsicDiode VDSS=500V ID25=26A RDS(on)≤230mΩ trr≤200ns AvalancheRatedFastInstrinsicDiode Features ●Internationalstandardpackages ●Fastintrinsicdiode ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomou | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Internationalstandardpackages LowRDS(on) UnclampedInductiveSwitching(UIS)rated Fastswitching MoldingepoxiesmeetUL94V-0flammabilityclassification | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andlaserdrives. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=200mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS™Family Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS™Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号:
IXFC26N50P
- 功能描述:
MOSFET 500V 26A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS |
07+/08+ |
ISOPLUS220trade |
115 |
询价 | |||
IXYS |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IXYS |
2019+ |
ISOPLUS220? |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
IXYS |
23+ |
ISOPLUSTO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IXYS |
20+ |
TO-220 |
90000 |
全新原装正品/库存充足 |
询价 | ||
IXYS/艾赛斯 |
23+ |
ISOPLUS220 |
10000 |
公司只做原装正品 |
询价 | ||
IXYS |
22+ |
ISOPLUS220? |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS/艾赛斯 |
21+ROHS |
ISOPLUSTO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IXYS/艾赛斯 |
23+ |
ISOPLUS220 |
6000 |
原装正品,支持实单 |
询价 | ||
IXYS |
2022+ |
ISOPLUS220? |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
相关规格书
更多- IXFH10N100
- IXFH10N80P
- IXFH11N80
- IXFH120N20P
- IXFH12N100
- IXFH12N100P
- IXFH12N90
- IXFH13N80
- IXFH14N100Q2
- IXFH14N80
- IXFH150N15P
- IXFH15N100
- IXFH15N100Q3
- IXFH160N15T2
- IXFH16N50P
- IXFH170N10P
- IXFH18N60P
- IXFH20N100P
- IXFH20N60
- IXFH20N80Q
- IXFH22N50P
- IXFH22N60P3
- IXFH24N50
- IXFH24N80P
- IXFH26N50
- IXFH26N50P3
- IXFH26N60P
- IXFH28N60P3
- IXFH30N50Q3
- IXFH320N10T2
- IXFH340N075T2
- IXFH36N50P
- IXFH400N075T2
- IXFH40N30Q
- IXFH42N20
- IXFH42N60P3
- IXFH44N50Q3
- IXFH50N20
- IXFH50N50P3
- IXFH52N30P
- IXFH52N50P2
- IXFH58N20Q
- IXFH6N100
- IXFH6N120P
- IXFH70N30Q3
相关库存
更多- IXFH10N100P
- IXFH110N10P
- IXFH120N15P
- IXFH120N25T
- IXFH12N100F
- IXFH12N120P
- IXFH13N50
- IXFH140N10P
- IXFH14N60P
- IXFH14N80P
- IXFH150N17T2
- IXFH15N100P
- IXFH15N80Q
- IXFH16N120P
- IXFH16N80P
- IXFH18N100Q3
- IXFH18N90P
- IXFH20N50P3
- IXFH20N80P
- IXFH21N50
- IXFH22N60P
- IXFH230N075T2
- IXFH24N50Q
- IXFH24N90P
- IXFH26N50P
- IXFH26N50Q
- IXFH26N60Q
- IXFH30N50P
- IXFH30N60P
- IXFH32N50
- IXFH35N30
- IXFH36N60P
- IXFH40N30
- IXFH40N50Q
- IXFH42N50P2
- IXFH44N50P
- IXFH4N100Q
- IXFH50N30Q3
- IXFH50N60P3
- IXFH52N30Q
- IXFH58N20
- IXFH60N50P3
- IXFH6N100Q
- IXFH70N20Q3
- IXFH74N20P