首页 >IRGB30B60F>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TO247PACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
TO247PACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-247ADPackage Benefits •BenchmarkEfficiencyforMotorControl | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-247ADPackage •Lead-Free Benefits •BenchmarkEfficiencyfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerSchottkyRectifier-30Amp60Volt | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | SIRECT | ||
PowerSchottkyRectifier-30Amp60Volt | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | SIRECT |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO-22 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-22 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
TO-22 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
16+ |
原厂封装 |
360 |
原装现货假一罚十 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
1822+ |
TO-220AB |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
23+ |
N/A |
37860 |
正品授权货源可靠 |
询价 | |||
IR |
1746+ |
TO220 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
IR |
18+ |
TO-220AB |
41200 |
原装正品,现货特价 |
询价 | ||
IR/VISHAY |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 |
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