首页 >MBR30B60CTH>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MBR30B60CTH | Power Schottky Rectifier - 30Amp 60Volt | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | SIRECT | |
TO247PACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
TO247PACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-247ADPackage Benefits •BenchmarkEfficiencyforMotorControl | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-247ADPackage •Lead-Free Benefits •BenchmarkEfficiencyfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerSchottkyRectifier-30Amp60Volt | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) | SIRECT |
详细参数
- 型号：
MBR30B60CTH
- 制造商：
SIRECT
- 制造商全称：
Sirectifier Global Corp.
- 功能描述：
Power Schottky Rectifier - 30Amp 60Volt
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||||
IR |
22+ |
TO262 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO262 |
8000 |
只做原装现货 |
询价 | ||
BCDSEMI |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
3000 |
公司现货 |
询价 | |||||
TSC |
2017+ |
TO-220 |
21546 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
ON |
2015+ |
TO-2203 |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
LT |
1227+ |
TO220 |
50 |
全新现货!低价支持实单!!一片起订 |
询价 | ||
TSC |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
TSC |
2016+ |
TO-220 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 |
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