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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFSL42N20D	文件：67.45 Kbytes Page：6 Pages	High frequency DC-DC converters Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
42N20	文件：68.06 Kbytes Page：2 Pages	FastSwitching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIRFB42N20D	文件：339.17 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •HighfrequencyDC-DCconverters •UninterruptiblePowerSupplies •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤55mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperatio	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFB42N20D	文件：339.17 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •HighfrequencyDC-DCconverters •UninterruptiblePowerSupplies •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤55mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperatio	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFB42N20D	文件：215.15 Kbytes Page：8 Pages	PowerMOSFET(Vdss=200V,Rds(on)max=0.055ohm,Id=44A) Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFB42N20D	文件：67.45 Kbytes Page：6 Pages	HighfrequencyDC-DCconverters Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFB42N20DPBF	文件：165.96 Kbytes Page：8 Pages	HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●MotorControl ●Uninterru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFB42N20DPBF	文件：174.93 Kbytes Page：9 Pages	HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFS42N20D	文件：67.45 Kbytes Page：6 Pages	HighfrequencyDC-DCconverters Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IXFH42N20	文件：104.03 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFH42N20	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFH42N20	文件：372.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFM42N20	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFM42N20	文件：317.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=42A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFM42N20	文件：104.03 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFZ42N20	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS

详细参数

型号：
IRFSL42N20D
制造商：
IRF
制造商全称：
International Rectifier
功能描述：
High frequency DC-DC converters

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	IRFSL42N20D	IR	2015+	TO-262	12500	全新原装,现货库存长期供应	询价
深圳市博浩通科技有限公司	IRFSL42N20D	IR	23+	TO-262	7600	全新原装现货	询价
深圳市特顺芯科技有限公司	IRFSL42N20D	IR	08+(pbfree)	TO-262	8866		询价
深圳市永贝尔科技有限公司	IRFSL42N20D	IRF	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市华来深电子有限公司	IRFSL42N20D	IR	23+	TO-262	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市振宏微科技有限公司	IRFSL42N20D	IR	23+	TO-262	10000	专做原装正品,假一罚百!	询价
深圳市百视威讯电子科技有限公司	IRFSL42N20D		23+	N/A	64910	正品授权货源可靠	询价
深圳兆威电子有限公司	IRFSL42N20D	IR	20+	TO-262	90000	全新原装正品/库存充足	询价
瀚佳科技(深圳)有限公司	IRFSL42N20D	IR	2020+	TO-262	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
艾睿国际（香港）有限公司	IRFSL42N20D	IR	2021+	TO-262	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多IRFSL42N20D供应商更新时间2024-5-16 9:02:00

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