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IRFSL59N10DPBF

HEXFET Power MOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●UPS/MotorControlInvert

IRFInternational Rectifier

英飞凌英飞凌科技公司

IIRFB59N10D

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.025Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB59N10

PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB59N10D

PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB59N10D

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.025Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB59N10DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●UPS/MotorControlInvert

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB59N10DPBF

HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB59N10DPBF

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFS59N10D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS59N10D

PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS59N10DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●UPS/MotorControlInvert

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL59N10D

PowerMOSFET(Vdss=100V,Rds(on)max=0.025ohm,Id=59A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL59N10D

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRFSL59N10DPBF

  • 制造商:

    International Rectifier

  • 功能描述:

    N CHANNEL MOSFET, 100V, 59A, TO-262, Transistor

  • Polarity:

    N Channel, Continuous D

供应商型号品牌批号封装库存备注价格
IR
07+/08+
TO-262-3
1840
询价
IR
23+
TO-262
7750
全新原装优势
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
IR
21+ROHS
TO-262-3
11111
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
22+
TO-262
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-262
8000
只做原装现货
询价
IR
23+
TO-262
11846
一级代理商现货批发,原装正品,假一罚十
询价
23+
N/A
36000
正品授权货源可靠
询价
IR
20+
TO-262
90000
全新原装正品/库存充足
询价
更多IRFSL59N10DPBF供应商 更新时间2024-5-18 16:30:00