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IRF1405PBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405S

AUTOMOTIVEMOSFET

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1405S

PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A??

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1405SLPBF

AdvancedProcessTechnology

VishayVishay Siliconix

威世科技威世科技半导体

IRF1405SPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405SPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A)

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1405Z

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZL

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZLPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZS

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1405ZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1405ZSPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA1405

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA1405P

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA1405PPBF

HEXFET짰PowerMOSFET

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingleand

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFBA1405PPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IRFP1405PBF

  • 功能描述:

    MOSFET MOSFT 55V 160A 5.3mOhm 120nCAC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
23+
TO-247
20540
保证进口原装现货假一赔十
询价
INFINEON/英飞凌
23+
TO-247
76000
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13
询价
INFINEON/IR
1907+
NA
3350
20年老字号,原装优势长期供货
询价
Infineon Technologies
24+
TO-247AC
30000
晶体管-分立半导体产品-原装正品
询价
IR
24+
TO-247
15000
全新原装的现货
询价
IR
16+
TO-247
6121
全新原装/深圳现货库2
询价
IR
23+
TO-247
65400
询价
IR
2020+
TO-247
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
INFINEON
20+
TO-247
50000
询价
IR
2021+
TO-247
9450
原装现货。
询价
更多IRFP1405PBF供应商 更新时间2024-6-8 18:02:00