IRFBF20规格书应用电路批发采购威世科技-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFBF20	文件：168.78 Kbytes Page：6 Pages	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitveAvalancheRated •FastSwitching •EaseofParalleling	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFBF20	文件：985.06 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技	Vishay
IRFBF20	文件：264.07 Kbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技	Vishay
IRFBF20L	文件：311.85 Kbytes Page：10 Pages	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount(IRFBF20S) •Low-profilethrough-hole(IRFBF20L) •AvailableinTape&Ree	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFBF20L	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技	Vishay
IRFBF20L	文件：312.93 Kbytes Page：11 Pages	Power MOSFET FEATURES •Surface-mount(IRFBF20S,SiHFBF20S) •Low-profilethrough-hole(IRFBF20L,SiHFBF20L) •Availableintapeandreel(IRFBF20S,SiHFBF20S) •DynamicdV/dtrating •150°Coperatingtemperature •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsofco	VishayVishay Siliconix 威世科技	Vishay
IRFBF20LPBF	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技	Vishay
IRFBF20PBF	文件：985.06 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技	Vishay
IRFBF20S	文件：311.85 Kbytes Page：10 Pages	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount(IRFBF20S) •Low-profilethrough-hole(IRFBF20L) •AvailableinTape&Ree	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFBF20S	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技	Vishay
IRFBF20S	文件：312.93 Kbytes Page：11 Pages	Power MOSFET FEATURES •Surface-mount(IRFBF20S,SiHFBF20S) •Low-profilethrough-hole(IRFBF20L,SiHFBF20L) •Availableintapeandreel(IRFBF20S,SiHFBF20S) •DynamicdV/dtrating •150°Coperatingtemperature •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsofco	VishayVishay Siliconix 威世科技	Vishay
IRFBF20S_V01	文件：312.93 Kbytes Page：11 Pages	Power MOSFET FEATURES •Surface-mount(IRFBF20S,SiHFBF20S) •Low-profilethrough-hole(IRFBF20L,SiHFBF20L) •Availableintapeandreel(IRFBF20S,SiHFBF20S) •DynamicdV/dtrating •150°Coperatingtemperature •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsofco	VishayVishay Siliconix 威世科技	Vishay
IRFBF20SPBF	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技	Vishay
IRFBF20STRL	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技	Vishay
IRFBF20STRLPBF	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技	Vishay
IRFBF20STRR	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技	Vishay
IRFBF20STRRPBF	文件：940.9 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapabeloftheaccommodatingdiesizesuptoHEX-4.Itprovides	VishayVishay Siliconix 威世科技	Vishay
IRFBF20_V01	文件：264.07 Kbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技	Vishay
IRFBF20LPBF	文件：373.95 Kbytes Page：10 Pages	HEXFET Power MOSFET	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFBF20LPBF	文件：312.93 Kbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技	Vishay

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详细参数

型号：
IRFBF20
功能描述：
MOSFET N-Chan 900V 1.7 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市昌和盛利电子有限公司	IRFBF20	IR	23+	TO-220	9896		询价
深圳市星佑电子有限公司	IRFBF20	IR	06+	TO-220	6000	全新原装绝对有货	询价
深圳市科恒伟业电子有限公司	IRFBF20	IR	2016+	TO-220	6528	房间原装进口现货假一赔十	询价
深圳市特顺芯科技有限公司	IRFBF20	IR	08+(pbfree)	TO-220AB	8866		询价
深圳市博浩通科技有限公司	IRFBF20	IR	23+	TO-220AB	8600	全新原装现货	询价
深圳市弘为电子有限公司	IRFBF20	IR	16+	原厂封装	466	原装现货假一罚十	询价
深圳市英科美电子有限公司	IRFBF20	IR	2021+	N/A	6800	只有原装正品	询价
深圳市永贝尔科技有限公司	IRFBF20	IRF	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市华来深电子有限公司	IRFBF20	IR	23+	TO220	8560	受权代理!全新原装现货特价热卖!	询价
深圳市百视威讯电子科技有限公司	IRFBF20		23+	N/A	48700	正品授权货源可靠	询价

更多IRFBF20供应商更新时间2024-4-29 17:24:00

详细参数

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