零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IRFD9024 | Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-1.6A) Vdss=-60V Rds(on)=0.28Ω Id=-1.6A | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
IRFD9024 | Repetitive Avalanche Rated | VishayVishay Siliconix 威世科技 | Vishay | |
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •ForautomaticInsertion •Endstackable •P-channel •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFET Power MOSFET Vdss=-60V Rds(on)=0.28Ω Id=-1.6A *Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDPCSPACERS/SUPPORTS INSULATEDPCSPACERS/SUPPORTS •Boardwillbeelectricallyinsulated,eliminatesneedforinsulatingwashers •Easysnap-inassembly •Notoolrequiredforinstallation •Designedfor.062(1.57)thickboards •Onepiecedesigneliminatestheneedforadditionalscrewsandnuts •Slimdesig | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
MilitaryManaged24-Port1GEthernetRouter/Switch FEATURESDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinmilitaryandcommercialapplications onland,seaandairplatforms. TheMILTECH9024isspecificallydesignedfor battlefieldC4ISR,voice,video,sensordataacquisition andcommunicationsinplatformsthatha | ENERCON Enercon Technologies Europe AG | ENERCON | ||
SnapRivets | Heyco Heyco | Heyco | ||
SnapRivets | Heyco Heyco | Heyco | ||
Cooper-WheelockAS/AHSerles | GAMEWELL-FCIGamewell-FCI by Honeywell Gamewell-FCI by Honeywell | GAMEWELL-FCI | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SAWComponentsLow-LossFilterforMobileCommunication942,5MHz Features ■Low-lossRFfilterformobiletelephoneEGSMsystem,receivepath ■Usablepassband35MHz ■Unbalancedoperation ■Impedance50Ωinputandoutput ■CeramicPackageforSurfaceMountedTechnology(SMT) | EPCOSEPCOS - TDK Electronics 爱普科斯爱普科斯与TDK元件事业部 | EPCOS | ||
15C20AWG7/28TCPVC/PVC | GENERALGeneral Electric 通用电气公司美国通用电气公司 | GENERAL | ||
DA9024Quad1.2ABuckPMICwithAudioDrivers | Dialog Dialog | Dialog |
详细参数
- 型号:
IRFD9024
- 功能描述:
MOSFET P-Chan 60V 1.6 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
9909 |
500 |
原装正品现货供应 |
询价 | |||
IR |
96+ |
DIP-4 |
20 |
原装 |
询价 | ||
IR |
23+ |
DIP-4 |
8238 |
询价 | |||
IR |
23+ |
HD1 |
8653 |
全新原装优势 |
询价 | ||
IOR |
02+ |
DIP-4P |
480 |
询价 | |||
IR |
16+ |
原厂封装 |
6111 |
原装现货假一罚十 |
询价 | ||
ir |
22+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
IR |
2020+ |
DIP4 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
22+23+ |
DIP-4 |
27994 |
绝对原装正品全新进口深圳现货 |
询价 |
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