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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFB41N15DPBF	文件：342.04 Kbytes Page：13 Pages	HEXFET Power MOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFB41N15DPBF	文件：714.57 Kbytes Page：13 Pages	High frequency DC-DC converters Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(SeeApp. NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IRFB41N15DPBF	文件：343 Kbytes Page：13 Pages	High frequency DC-DC converters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFB41N15DPBF_15	文件：343 Kbytes Page：13 Pages	High frequency DC-DC converters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
FB41N15D	文件：193 Kbytes Page：11 Pages	PowerMOSFET(Vdss=150V,Rds(on)max=0.045ohm,Id=41A) Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IIRFB41N15D	文件：338.36 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤45mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFB41N15D	文件：193 Kbytes Page：11 Pages	PowerMOSFET(Vdss=150V,Rds(on)max=0.045ohm,Id=41A) Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFB41N15D	文件：268.02 Kbytes Page：12 Pages	HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFB41N15D	文件：338.36 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤45mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFIB41N15D	文件：268.02 Kbytes Page：12 Pages	HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFIB41N15D	文件：260.61 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFIB41N15DPBF	文件：342.04 Kbytes Page：13 Pages	HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFIB41N15DPbF	文件：714.57 Kbytes Page：13 Pages	HighfrequencyDC-DCconverters Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(SeeApp. NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IRFS41N15D	文件：268.02 Kbytes Page：12 Pages	HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFS41N15D	文件：193 Kbytes Page：11 Pages	PowerMOSFET(Vdss=150V,Rds(on)max=0.045ohm,Id=41A) Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFS41N15D	文件：299.93 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFS41N15DPBF	文件：342.04 Kbytes Page：13 Pages	HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFS41N15DPbF	文件：714.57 Kbytes Page：13 Pages	HighfrequencyDC-DCconverters Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(SeeApp. NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IRFSL41N15D	文件：193 Kbytes Page：11 Pages	PowerMOSFET(Vdss=150V,Rds(on)max=0.045ohm,Id=41A) Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFSL41N15D	文件：268.02 Kbytes Page：12 Pages	HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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详细参数

型号：
IRFB41N15DPBF
功能描述：
MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市安博威科技有限公司	IRFB41N15DPBF	INFINEON/IR	15+	TO-220-3	50		询价
深圳市品优时代科技有限公司	IRFB41N15DPBF	INFINEON/IR	1907+	NA	400	20年老字号,原装优势长期供货	询价
深圳市航润创能电子集团有限公司	IRFB41N15DPBF	INFINEON/IR	21+	NA	50	只做原装,假一罚十	询价
深圳市华高宇电子有限公司	IRFB41N15DPBF	INFINEON/IR	15+		50	TO-220-3	询价
易创佳业科技（深圳）有限公司	IRFB41N15DPBF	INFINEON/IR	23+	TO-220-3	50	原装现货支持送检	询价
深圳市润联芯城科技有限公司	IRFB41N15DPBF	IR墨西哥	16+17+	TO-220	4178	只做原装正品	询价
深圳市高捷芯城科技有限公司	IRFB41N15DPBF	Infineon(英飞凌)	23+	TO-220	8498	支持大陆交货,美金交易。原装现货库存。	询价
深圳市特顺芯科技有限公司	IRFB41N15DPBF	IR	07+/08+	TO-220-3	662		询价
深圳市博浩通科技有限公司	IRFB41N15DPBF	IR	23+	TO-220AB-	7750	全新原装优势	询价
深圳中芯器材有限公司	IRFB41N15DPBF	ir	dc0617	原厂封装	2038	INSTOCK:50/tube/to220	询价

更多IRFB41N15DPBF供应商更新时间2024-4-29 14:00:00

详细参数

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