首页 >IRF3710PBF(IR)>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET(Vdss=100V,Rds(on)=0.025ohm,Id=57A) VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET(VDSS=100V,RDS(on)=23m廓,ID=57A) VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnologyUltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology VDSS=100V RDS(on)=18mΩ ID=59A Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimproved | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnologyUltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnologyUltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Through-HolePackags TO-220FullPak(FullyIsolated) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N?밅HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
终端可免费供样,支持BOM配单 |
询价 | |||
IR |
23+ |
8000 |
专注配单,只做原装进口现货 |
询价 | |||
IR |
23+ |
8000 |
专注配单,只做原装进口现货 |
询价 | |||
VISHAY |
21+ |
TO-220 |
20000 |
原厂订货价格优势,可开13%的增值税票 |
询价 | ||
VISHAY |
TO-220 |
35200 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
IR/英飞凌 |
2023+ |
TO-220 |
52000 |
全新原装正品,优势价格 |
询价 | ||
Infine |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
Infineon Technologies |
22+ |
原厂原装 |
100000 |
询价 | |||
IR |
1725+ |
TO-220AB |
5600 |
只做原装进口,假一罚十 |
询价 |
相关规格书
更多- IRF3710S
- IRF450
- IRF4905
- IRF510
- IRF520N
- IRF5210
- IRF530
- IRF5305S
- IRF530N
- IRF530S
- IRF540N
- IRF540NS
- IRF5800TR
- IRF610
- IRF620
- IRF6217
- IRF630
- IRF630B
- IRF630N
- IRF630S
- IRF634A
- IRF640
- IRF640B
- IRF640NPBF
- IRF640NSTRL
- IRF644
- IRF6604
- IRF7101
- IRF7102
- IRF7103Q
- IRF7104
- IRF7105
- IRF7106
- IRF720
- IRF7201TR
- IRF7203
- IRF7204TR
- IRF7205TR
- IRF7210
- IRF7233
- IRF7240
- IRF7301
- IRF7303
- IRF7304
- IRF7306
相关库存
更多- IRF4435
- IRF460
- IRF4905S
- IRF520
- IRF520S
- IRF5210S
- IRF5305
- IRF530A
- IRF530NS
- IRF540
- IRF540NPBF
- IRF540S
- IRF5803D2
- IRF614
- IRF6215
- IRF624
- IRF630A
- IRF630M
- IRF630NS
- IRF634
- IRF634B
- IRF640A
- IRF640N
- IRF640NS
- IRF640S
- IRF644S
- IRF710
- IRF7101TR
- IRF7103
- IRF7103TR
- IRF7104TR
- IRF7105TR
- IRF7108
- IRF7201
- IRF7202
- IRF7204
- IRF7205
- IRF7207
- IRF7220
- IRF7233TR
- IRF730
- IRF7301TR
- IRF7303TR
- IRF7304TR
- IRF7306TR
