IRF3710S中文资料PDF规格书
IRF3710S规格书详情
VDSS = 100V
RDS(on) = 23mΩ
ID = 57A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
产品属性
- 型号：
IRF3710S
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET N-CH 100V 57A 3-Pin(2+Tab) D2PAK
- 功能描述：
MOSFET N D2-PAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
539 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
2020+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
2002 |
199 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 | |||
Infineon |
23+ |
D2PAK |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
IR |
24+ |
TO263 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
IR/国际整流器 |
23+ |
TO-263-2 |
12700 |
买原装认准中赛美 |
询价 | ||
IR |
23+ |
TO-263 |
50000 |
专做原装正品,假一罚百! |
询价 | ||
IR |
22+ |
TO-263 |
86962 |
询价 | |||
IOR |
23+ |
TO263 |
7750 |
全新原装优势 |
询价 | ||
IR/国际整流器 |
23+ |
TO-263-2 |
7188 |
秉承只做原装 终端我们可以提供技术支持 |
询价 |
