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IRF3710ZSPBF中文资料PDF规格书
IRF3710ZSPBF规格书详情
Description
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号：
IRF3710ZSPBF
- 功能描述：
MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
ROHS+Original |
NA |
8910 |
专业电子元器件供应链/QQ 350053121 /正纳电子 |
询价 | ||
Infineon Technologies |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 | ||
Infineon Technologies |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原装正品，支持实单 |
询价 | ||
IR |
23+ |
NA |
8910 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
询价 | ||
IR |
21+ |
TO-263 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
22+23+ |
TO-263 |
14629 |
绝对原装正品全新进口深圳现货 |
询价 | ||
INFINEON |
23+ |
NA |
100 |
现货!就到京北通宇商城 |
询价 | ||
IR |
TO-263 |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
IR |
2024+实力库存 |
TO-263 |
244 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 |
