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GRF5616

4-WATT LINEAR AMPLIFIER 1625 to 1675 MHz

FEATURES ExcellentOP1dB,IP3andEfficiencyPerformance +30.5dBmLinearOutputPowerat85°C +35.4dBmOP1dBmaintainedat85°C FlexibleBiasing 275mAQuiescentCurrent FlexibleBiasing DigitalShutdown RuggedDesignisResilienttoMismatchedLoads -40to85°COperatingTemperature

GUERRILLAGuerrilla RF, Inc.

GUERRILLAGuerrilla RF, Inc.

5616

2-FUNCTION,4-DIGITLCDAUTOMOTIVECLOCK-PROGRAMMABLE

FEATURES ■DigitalTuningofCrystalFrequency ■PROMforStoringFrequencyCorrectionInformation ■12or24HourTimekeepingOption ■FlashingColon ■TwoSwitchesControlAllSettingFunctions ■HighNoiseImmunity ■InternalPower-UpResetCircuitry ■InternalVoltageRegulation

Allegro

Allegro MicroSystems

5616-RC

HighCurrentChokes

BournsBourns Inc.

伯恩斯(邦士)

ALC5616

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

ALC5616-CG

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

ALC5616-CGT

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

AOZ5616QI

High-Current,High-PerformanceDrMOSPowerModule

GeneralDescription TheAOZ5616QIisahighefficiencysynchronousbuck powerstagemoduleconsistingoftwoasymmetrical MOSFETsandanintegrateddriver.TheMOSFETsare individuallyoptimizedforoperationinthesynchronous buckconfiguration.TheHigh-SideMOSFETisoptimized toachieve

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

BCP5616

LowpowerNPNTransistor

SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BCP5616Q

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616Q

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616QTA

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616QTA

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616QTC

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616QTC

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616T

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TA

NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616TC

NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616TQ

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TQTA

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TQTC

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

供应商型号品牌批号封装库存备注价格
Guerrilla RF
20+
标准封装
15000
原厂授权一级代理商!
询价
GUERRILLA RF
24+
DFN
39500
进口原装现货 支持实单价优
询价
23+
285
现货供应
询价
GUERRILL
24+25+/26+27+
DFN-6.贴片
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
Guerrilla
2000
询价
21+ROHS
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
GCT
QFN
5000
询价
GCT
22+
QFN48
2500
强调现货,随时查询!
询价
GCT
1215+
QFN48
150000
全新原装,绝对正品,公司大量现货供应.
询价
GCT
23+
QFN
1048
优势库存
询价
更多GRF5616供应商 更新时间2024-6-5 8:00:00