G1N120BN资料使用说明书批发采购仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
1N120	文件：2.79285 Mbytes Page：78 Pages	GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
HGTD1N120BNS	文件：96.46 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTD1N120BNS	文件：97.6 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTD1N120BNS	文件：71.96 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTD1N120BNS	文件：312.88 Kbytes Page：2 Pages	TrenchField-StopTechnologyIGBT DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·ACandDCmotorcontrols ·Power ·Lighting	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
HGTD1N120CNS	文件：77.16 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP1N120BN	文件：97.6 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP1N120BN	文件：71.96 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP1N120BN	文件：96.46 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP1N120BND	文件：75.75 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120BNDandtheHGT1S1N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP1N120CN	文件：77.16 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP1N120CND	文件：80.17 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120CNDandtheHGT1S1N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IXTA1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXTA1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters •	IXYS IXYS Integrated Circuits Division	IXYS
IXTP1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXTP1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters •	IXYS IXYS Integrated Circuits Division	IXYS
IXTY1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters •	IXYS IXYS Integrated Circuits Division	IXYS
IXTY1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
STP1N120	文件：136.31 Kbytes Page：10 Pages	channel1200V-30廓-500mA-TO-220Zener-protectedSuperMESH??PowerMOSFET Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
UG1N120	文件：290.58 Kbytes Page：3 Pages	1200VNPTSERIESN-CHANNELIGBT	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	G1N120BN	FAIRCHILD	23+	TO-TO-220	12300	全新原装真实库存含13点增值税票!	询价
深圳市维尔达电子有限公司	G1N120BN	FAIRCHILD	2023+	TO-220	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市威尔健半导体有限公司	G1N120BN	NEXPERIA/安世	23+	SOT404	69820	终端可以免费供样,支持BOM配单!	询价
深圳市国宇半导体科技有限公司	G1N120BN	FAIRCHILD/仙童	23+	TO-220	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	G1N120BN	FAIRCHILD/仙童	2022+	TO-220	12888	原厂代理终端免费提供样品	询价
深圳市创新迹电子有限公司	G1N120BN	FAIRCHILD/仙童	22+	TO-220	25000	只做原装进口现货,专注配单	询价
深圳市勤思达科技有限公司	G1N4148	1050	1430+	新原装	5800	全新原装,公司大量现货供应,绝对正品	询价
深圳兆威电子有限公司	G1N50	ZWY	23+	SOT-89	76565	原装正品现货	询价
贸泽芯城（深圳）电子科技有限公司	G1N50	-	21+ROHS	SMD	90000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
艾睿国际（香港）有限公司	G1NP02ELL	GOFORD(谷峰)	2112+	SOT-23-6	105000	3000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价

更多G1N120BN供应商更新时间2024-6-8 10:53:00

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