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IXTA10N60P

N-ChannelEnhancementMode

PolarHV™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTH10N60

10AMP,600V,0.55-ohm/0.7-ohm

10AMP,600V,0.55Ω/0.7Ω

IXYS

IXYS Integrated Circuits Division

IXTH10N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTI10N60P

PolarHVPowerMOSFET

PolarHV™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTM10N60

10AMP,600V,0.55-ohm/0.7-ohm

10AMP,600V,0.55Ω/0.7Ω

IXYS

IXYS Integrated Circuits Division

IXTP10N60P

PolarHVPowerMOSFET

PolarHV™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTP10N60P

N-ChannelEnhancementMode

PolarHV™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTP10N60P

iscN-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤740mΩ@VGS=10V •Fullycharacterizedavalanchevoltageandcurrent •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Switch-ModeandResonant-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTP10N60PM

iscN-ChannelMOSFETTransistor

•FEATURES •DrainSourceVoltage- :VDSS=600V(Min) •Staticdrain-sourceon-resistance :RDS(on)≤0.74Ω@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATION •DC/DCConverter •Idealforhigh-frequen

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTP10N60PM

PolarHVPowerMOSFET

PolarHV™PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated Features •Plasticovermoldedtabforelectricalisolation •Internationalstandardpackage •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Integrated Circuits Division

JCS10N60BT

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS10N60BT-O-B-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS10N60C

LEDpowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS10N60CT-O-C-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS10N60FC-O-F-N-B

LEDpowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS10N60FT-O-F-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS10N60T

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JMP10N60B

JJWJieJie Microelectronics Co., Ltd.

捷捷微江苏捷捷微电子股份有限公司

PDF上传者:深圳市溢航科技有限公司

K10N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor:   -Motorcontrols   -Inverter ●NPT-Technologyfor600Va

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

KF10N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID

KECKEC CORPORATION

KEC株式会社

详细参数

  • 型号:

    FQPF10N60C

  • 功能描述:

    MOSFET 600V N-Ch Q-FET advance C-Series

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
TO-220F
20540
保证进口原装现货假一赔十
询价
FAIRCHILD/仙童
23+
NA
7825
原装正品!清仓处理!
询价
FSC
24+
N/A
15000
全新原装的现货
询价
FAIRCHILD原装正品专卖
23+
TO-220F
69526
专注原装正品现货特价中量大可定
询价
FAIRCHILD/仙童
15+
DIPSOP
12300
原装进口现货,假一罚十
询价
FAIRCHILD
23+
TO-220F
65400
询价
FSC
2020+
TO-220F
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
FAIRCHILD/仙童
2021+
TO-220-3PF
3580
原装现货/15年行业经验欢迎询价
询价
FSC
21+
TO-220F
5000
专营原装正品现货,当天发货,可开发票!
询价
FAIRCHILD/仙童
21+
6000
原装正品
询价
更多FQPF10N60C供应商 更新时间2024-6-9 20:29:00