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FQPF10N60C

600V N-Channel MOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtomini-mizeon-stateresistance,providesuperiorswitchingperfor-mance,andwithstandhighenergypul

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF10N60C

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformanc

KERSEMI

Kersemi Electronic Co., Ltd.

FQPF10N60C

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=9.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.73Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF10N60C

600V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF10N60C

600V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF10N60CF

600V N-Channel MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10N60

10Amps,600/650VoltsN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

10N60

10Amps,600/650VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

10N60

10A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

10N60

10A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

10N60

10A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

10N60

10A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

10N60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

10N60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

10N60

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

10N60

10Amps,600VoltsN-CHANNELMOSFET

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

10N60

N-CHANNELPOWERMOSFET

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

10N60

600VN-ChannelPowerMOSFET

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

10N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

10N60

N-CHANNELPOWERMOSFET

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

详细参数

  • 型号:

    FQPF10N60C

  • 功能描述:

    MOSFET 600V N-Ch Q-FET advance C-Series

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
TO-220F
20540
保证进口原装现货假一赔十
询价
FAIRCHILD/仙童
23+
NA
7825
原装正品!清仓处理!
询价
FSC
13+
N/A
15000
全新原装的现货
询价
FAIRCHILD原装正品专卖
23+
TO-220F
69526
专注原装正品现货特价中量大可定
询价
FAIRCHILD/仙童
15+
DIPSOP
12300
原装进口现货,假一罚十
询价
FAIRCHILD
23+
TO-220F
65400
询价
FSC
2020+
TO-220F
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
FAIRCHILD/仙童
2021+
TO-220-3PF
3580
原装现货/15年行业经验欢迎询价
询价
FSC
21+
TO-220F
5000
专营原装正品现货,当天发货,可开发票!
询价
FAIRCHILD/仙童
21+
6000
原装正品
询价
更多FQPF10N60C供应商 更新时间2024-4-28 18:13:00