FQI11N40TU数据表ic资料市场行情仙童半导体-114ic电子网

首页 >FQI11N40TU>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
11N40	文件：194.07 Kbytes Page：6 Pages	400VN-CHANNELMOSFET DESCRIPTION The11N40usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES RDS(ON)=0.52Ω@VGS=10V Ultr	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
11N40	文件：244.91 Kbytes Page：6 Pages	11.4A,400VN-CHANNELPOWERMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
11N40C	文件：709.76 Kbytes Page：10 Pages	FQP11N40C/FQPF11N40CN-ChannelQFET짰MOSFET400V,10.5A,530m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FIR11N40FG	文件：2.39982 Mbytes Page：8 Pages	400VN-ChannelMOSFET-T	FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司	FOSTER
FQA11N40	文件：363.33 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.48Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA11N40	文件：703.95 Kbytes Page：8 Pages	400VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF11N40	文件：698.41 Kbytes Page：8 Pages	400VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF11N40	文件：421.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=8.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.48Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB11N40	文件：333.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.48Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB11N40	文件：566.92 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11N40C	文件：622.47 Kbytes Page：9 Pages	400VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11N40CTM	文件：977.97 Kbytes Page：8 Pages	N-ChannelQFET짰MOSFET400V,10.5A,530m廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11N40TM	文件：572.4 Kbytes Page：9 Pages	400VN-ChannelMOSFET	DIODESDiodes Incorporated 达尔科技	DIODES
FQI11N40	文件：566.92 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI11N40C	文件：622.47 Kbytes Page：9 Pages	400VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP11N40	文件：708.64 Kbytes Page：8 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP11N40	文件：302.34 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=11.4A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.48Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQP11N40C	文件：709.76 Kbytes Page：10 Pages	FQP11N40C/FQPF11N40CN-ChannelQFET짰MOSFET400V,10.5A,530m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP11N40C	文件：709.76 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET400V,10.5A,530m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF11N40	文件：718.05 Kbytes Page：8 Pages	400VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

12 >>>

详细参数

型号：
FQI11N40TU
功能描述：
MOSFET 400V N-Channel QFET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	FQI11N40TU	onsemi(安森美)	23+	I2PAK	7828	支持大陆交货,美金交易。原装现货库存。	询价
深圳市鼎盛源芯科技有限公司	FQI11N40TU	harris	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
深圳市正迈科技有限公司	FQI11N40TU	FSC/ON	23+	原包装原封 □□	965	原装进口特价供应 QQ 1304306553 更多详细咨询库存	询价
深圳市百诺芯科技有限公司	FQI11N40TU	FAIRCHILD/仙童	23+	I2-PAKTO-262	24190	原装正品代理渠道价格优势	询价
深圳市百域芯科技有限公司	FQI11N40TU	FAIRCHILD/仙童	21+	I2-PAKTO-262	30000	优势供应实单必成可13点增值税	询价
深圳市国宇半导体科技有限公司	FQI11N40TU	FAIRCHILD仙童	23+	I2PAK	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	FQI11N40TU	Fairchild/ON	22+	TO2623 Long Leads I2Pak TO262A	9000	原厂渠道,现货配单	询价
深圳市瑞卓芯科技有限公司	FQI11N40TU	FAIRCHILD/仙童	22+	I2-PAKTO-262	18000	原装正品	询价
深圳市鹏顺微电子科技有限公司	FQI11N40TU	ON Semiconductor	2022+	TO-262-3,长引线,I2Pak,TO-26	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市旺财半导体有限公司	FQI11N40TU	Fairchild	23+		33500		询价

更多FQI11N40TU供应商更新时间2024-6-14 15:14:00

详细参数

相关规格书

相关库存