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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQI11N40	文件：566.92 Kbytes Page：9 Pages	400V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI11N40C	文件：622.47 Kbytes Page：9 Pages	400V N-Channel MOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
11N40	文件：194.07 Kbytes Page：6 Pages	400VN-CHANNELMOSFET DESCRIPTION The11N40usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES RDS(ON)=0.52Ω@VGS=10V Ultr	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
11N40	文件：244.91 Kbytes Page：6 Pages	11.4A,400VN-CHANNELPOWERMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
11N40C	文件：709.76 Kbytes Page：10 Pages	FQP11N40C/FQPF11N40CN-ChannelQFET짰MOSFET400V,10.5A,530m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FIR11N40FG	文件：2.39982 Mbytes Page：8 Pages	400VN-ChannelMOSFET-T	FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司	FOSTER
FQA11N40	文件：363.33 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.48Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA11N40	文件：703.95 Kbytes Page：8 Pages	400VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF11N40	文件：698.41 Kbytes Page：8 Pages	400VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF11N40	文件：421.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=8.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.48Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB11N40	文件：333.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.48Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB11N40	文件：566.92 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11N40C	文件：622.47 Kbytes Page：9 Pages	400VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11N40CTM	文件：977.97 Kbytes Page：8 Pages	N-ChannelQFET짰MOSFET400V,10.5A,530m廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11N40TM	文件：572.4 Kbytes Page：9 Pages	400VN-ChannelMOSFET	DIODESDiodes Incorporated 达尔科技	DIODES
FQP11N40	文件：708.64 Kbytes Page：8 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP11N40	文件：302.34 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=11.4A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.48Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQP11N40C	文件：709.76 Kbytes Page：10 Pages	FQP11N40C/FQPF11N40CN-ChannelQFET짰MOSFET400V,10.5A,530m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP11N40C	文件：709.76 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET400V,10.5A,530m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF11N40	文件：718.05 Kbytes Page：8 Pages	400VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
FQI11N40
制造商：
FAIRCHILD
制造商全称：
Fairchild Semiconductor
功能描述：
400V N-Channel MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	FQI11N40	FAIRCHILD	08+(pbfree)	TO-262(I2PAK)	8866		询价
深圳市星佑电子有限公司	FQI11N40	仙童	06+	TO-262	2500	原装	询价
深圳市永贝尔科技有限公司	FQI11N40	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
瀚佳科技(深圳)有限公司	FQI11N40	FAIRC	2020+	TO-262(I2PAK)	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市航宇科工半导体有限公司	FQI11N40	FAIRC	2105+	TO-262(I2PAK)	12000	原装正品	询价
无锡固电半导体股份有限公司	FQI11N40	isc	2024	I2PAK/TO-262	14000	国产品牌isc,可替代原装	询价
深圳庞田科技有限公司	FQI11N40	FAIRCHILD	2023+环保现货	TO-262(I2PAK	20000	专注军工、汽车、医疗、工业等方案配套一站式服务	询价
深圳市芯为科技有限公司	FQI11N40	FAIRC	2023+	TO-262(I2PAK)	16800	芯为只有原装,公司现货	询价
深圳市创新迹电子有限公司	FQI11N40	FAIRC	23+	TO-262(I2PAK)	7300	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	FQI11N40	FAIRC	23+	TO-262(I2PAK)	7300	专注配单,只做原装进口现货	询价

更多FQI11N40供应商更新时间2024-6-3 16:30:00

详细参数

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