FQI33N10规格书应用电路市场行情仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQI33N10	文件：1.23197 Mbytes Page：9 Pages	N-Channel QFET MOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI33N10	文件：330.83 Kbytes Page：9 Pages	100V N-Channel MOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI33N10L	文件：660.05 Kbytes Page：9 Pages	100V LOGIC N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
33N10	文件：67.44 Kbytes Page：2 Pages	FastSwitching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
33N10	文件：245.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA33N10	文件：566.72 Kbytes Page：8 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQA33N10	文件：363.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=52mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA33N10L	文件：363.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=52mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA33N10L	文件：642.58 Kbytes Page：8 Pages	100VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF33N10	文件：571.55 Kbytes Page：8 Pages	100VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF33N10	文件：421.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=25.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.052Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQAF33N10L	文件：647.27 Kbytes Page：8 Pages	100VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10	文件：585.35 Kbytes Page：9 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10	文件：1.23197 Mbytes Page：9 Pages	N-ChannelQFETMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10	文件：330.83 Kbytes Page：9 Pages	100VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10	文件：309.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB33N10L	文件：309.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB33N10L	文件：660.05 Kbytes Page：9 Pages	100VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10L	文件：317.36 Kbytes Page：2 Pages	N-ChannelMOSFET FEATURES ·DrainCurrent-ID=33A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.052Ω(Max)@VGS=10V APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB33N10L	文件：1.89098 Mbytes Page：8 Pages	N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
FQI33N10
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 33A I(D) | TO-262AA

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	FQI33N10	仙童	05+	TO-262	2500	原装进口	询价
深圳市永贝尔科技有限公司	FQI33N10	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
无锡固电半导体股份有限公司	FQI33N10	isc	2024	I2PAK/TO-262	14000	国产品牌isc,可替代原装	询价
深圳市华来深电子有限公司	FQI33N10	FSC	23+	TO-262	8560	受权代理!全新原装现货特价热卖!	询价
深圳市航润创能电子集团有限公司	FQI33N10TU	FSC	21+	TO-262	1650	原装现货假一赔十	询价
深圳市汇莱威科技有限公司	FQI33N10LTU	FAIRCHILD/仙童		TO-262	265209	假一罚十原包原标签常备现货!	询价
深圳市振芯物联科技有限公司	FQI33N10TU	FSC	22+	TO-262	32350	原装正品假一罚十公司现货	询价
深圳市威尔健半导体有限公司	FQI33N10TUMOS(场效应管)	FAIRCHILD/仙童	23+	TO-262	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	FQI33N10TU	FSC	21+	TO-262	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	FQI33N10TUMOS(场效应管)	FAIRCHILD/仙童	2022	TO-262	80000	原装现货,OEM渠道,欢迎咨询	询价

更多FQI33N10供应商更新时间2024-6-4 15:42:00

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